CEM4532 Datasheet PDF - Chino-Excel Technology


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CEM4532
Chino-Excel Technology

Part Number CEM4532
Description Dual Enhancement Mode Field Effect Transistor
Page 7 Pages

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CEM4532
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 4.7A, RDS(ON) = 55m@VGS = 10V.
RDS(ON) = 85m@VGS = 4.5V.
-30V, -4.5A, RDS(ON) = 80m@VGS = -10V.
RDS(ON) = 135m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 4.7
IDM 20
P-Channel
-30
±20
-4.5
-20
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
2003.January
5 - 71
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CEM4532
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 4.7A
VGS = 4.5V, ID = 3.7A
VDS = 15V, ID = 4.7A
1
3V
40 55 m
70 85 m
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
357
190
pF
pF
Crss 60 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 4.7A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.7A
15 30
18 40
30 60
5 15
10.4 15
2.3
2.8
ns
ns
ns
ns
nC
nC
nC
1.7 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5 - 72



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CEM4532
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-30
-1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -3.6A
VDS = -15V, ID = -4.5A
-1
-3 V
60 80 m
105 135 m
5.8 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
448
317
308
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -4.5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1.7A
19 45 ns
19 45 ns
38 75 ns
48 95 ns
18 23 nC
3 nC
4.5 nC
-1.7 A
-1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5
5 - 73



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N-CHANNEL
20
VGS=10,9,8,7,6V
16
12
VGS=5V
VGS=4V
8
4 VGS=3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
600
500
400 Ciss
300
200 Coss
100 Crss
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5 - 74
CEM4532
20
25 C
16
12
8
4 TJ=125 C
0
12
-55 C
34
5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=4.7A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current




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