CEM4410B Datasheet PDF - Chino-Excel Technology


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CEM4410B
Chino-Excel Technology

Part Number CEM4410B
Description N-Channel Enhancement Mode Field Effect Transistor
Page 5 Pages

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CEM4410B
Dec. 2002
N-Channel Enhancement Mode Field Effect Transistor
5 FEATURES
30V , 12.5A , RDS(ON)=9.5m@VGS=10V.
RDS(ON)=14m@VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface mount Package.
DDDD
8 7 65
SO-8
1
1 234
S SS G
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a
-Pulsed
Drain-Source Diode Forward Current a
Maximum Power Dissipationa
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
Ć20
Ć12.5
Ć50
2.3
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
a
Thermal Resistance, Junction-to-Ambient
RįJA
50
C/W
5-2



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CEM4410B
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICSb
BVDSS VGS = 0V, ID = 250µA
IDSS VDS = 30V, VGS = 0V
IGSS VGS =Ć20V, VDS = 0V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 10A
VGS = 4.5V, ID =5A
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICSc
ID(ON)
gFS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 5V, VGS = 10V
VDS = 15V, ID = 10A
VDS =10V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGS = 10V,
RGEN = 6
VDS =15V, ID = 10A,
VGS =10V
5-3
Min TypC Max Unit
30 V
1 µA
Ć100 nA
1 3V
7.5 9.5 m
11 14 m
25
18
A
S
2237 PF
1228 PF
320 PF
33 65 ns
60 108 ns
65 117 ns
50 90 ns
57 68 nC
9 nC
16 nC
5



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CEM4410B
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol Condition
Min Typ C Max Unit
5 DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD VGS = 0V, Is = 2.3A
0.75 1.2 V
Notes
a.Surface Mounted on FR4 Board, t ś10sec.
b.Pulse Test:Pulse Widthś300ijs, Duty Cycle ś 2%.
c.Guaranteed by design, not subject to production testing.
30
VGS=10,8,6,5,4V
25
20
15
10 VGS=3V
5
0
0
0.5 1.0
1.5 2.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
50
40
30
20
10 Tj=125 C
25 C
-55 C
0
1 234
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3000
2500
2000
Ciss
1500
1000
Coss
500
0
0
Crss
5 10 15
20 25 30
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
1.80
ID=10A
VGS=10V
1.60
1.40
1.20
1.00
0.80
0.60
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation with
Temperature
5-4



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1.30
VDS=VGS
1.20 ID=250ijA
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25 0
25 50
75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
25
20
15
10
5
VDS=15V
0
0 5 10 15 20
IDS, Drain-Source Current (A)
Figure 7. Transconductance Variation
with Drain Current
10
VDS=15V
8 ID=10A
6
4
2
0
0 15 30 45 60
Qg, Total Gate Charge (nC)
Figure 9. Gate Charge
5-5
CEM4410B
1.15
ID=250ijA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
5
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
50
10
1
0.1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
2
10
101
100
RDS(ON) Limit
1ms
1s
-1
10 TA=25 C
Tj=150 C
Single Pulse
-2
10 10-2
10-1 100
101
102
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area




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