CDBW140-G Datasheet PDF - Comchip Technology

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CDBW140-G
Comchip Technology

Part Number CDBW140-G
Description (CDBW120-G - CDBW140-G) Schottky Barrier Diode
Page 2 Pages


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Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
CDBW120-G Thru. CDBW140-G
Forward current: 1.0A
Reverse voltage: 20 to 40V
RoHS Device
Features
SOD-123
-For use in low voltage, high frequency inverters.
-Free wheeling, and polarity protection applications.
Mechanical Data
0.110 (2.80)
0.098 (2.50)
-Case: SOD-123, molded plastic.
-Terminals: solderable per MIL-STD-750, method
2026.
-Polarity: indicated by cathode end.
-Weight: approx. 0.008 grams.
0.028 (0.70)
0.019 (0.50)
0.053 (1.35)
0.037 (0.95)
0.154 (3.90)
0.141 (3.60)
0.071 (1.80)
0.055 (1.40)
0.008 (0.20)max
Marking
0.005 (0.12)max
0.016 (0.40)min
CDBW0120-G: SJ
CDBW0130-G: SK
CDBW0140-G: SL
Dimensions in inches and (millimeter)
Maximum Ratings (At Ta=25OC, unless otherwise noted)
Parameter
www.DataSheet4U.com
Non-repetitive peak reverse voltage
Symbol
VRM
CDBW0120-G
20
CDBW0130-G
30
CDBW0140-G Unit
40 V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
20
30
40 V
VR
RMS reverse voltage
VR(RMS)
14
21
28 V
Average rectified output current
IO
1A
Peak forward surge current @8.3ms
IFSM
25 A
Repetitive peak forward current
IFRM
625 mA
Power dissipation
PD 250 mW
Thermal resistance, junction to ambient
RθJA
500 OC/W
Storage temperature
TSTG
-65 ~ +150
OC
Electrical Characteristics (At Ta=25OC, unless otherwise noted)
Parameter
Conditions
Symbol
Min.
Max.
Unit
Reverse breakdown voltage
IR=1mA
CDBW0120-G
CDBW0130-G
CDBW0140-G
VBR
20
30
40
V
Reverse voltage leakage current
VR=20V
VR=30V
VR=40V
CDBW0120-G
CDBW0130-G
CDBW0140-G
IR
1 mA
Forward voltage
IF=1A
IF=3A
CDBW0120-G
CDBW0130-G
CDBW0140-G
CDBW0120-G
CDBW0130-G
CDBW0140-G
VF
0.45
0.55
0.60
0.75
0.875
0.90
V
Diode capacitance
VR=4V, f=1MHz
CD
120 pF
QW-BB020
REV:A
Page 1



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Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBW120-G Thru. CDBW140-G)
Fig.1 Typical Forward Current Derating Curve
2
Fig.2 Maximum Non-Repetitive Peak
Forward Surge Current
30
25
1 20
15
0.5 10
Inductive or resistive load
0.375" (9.5mm) lead length
0
0 25 50 75 100 125 150
Case Temperature (OC)
175
5
0
1 10 100
Number of Cycles at 60Hz
Fig.3 Typical Instantaneous Forward
Characteristics
100
TJ=125OC
10
TJ=25OC
1
0.1
0 .0 1
0
Pulse width=300μs
1% duty cycle
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
1.8
Fig.4 Typical Reverse Characteristics
100
10 TJ=125O
1.0
0.1
0 .0 1
TJ=75OC
TJ=25OC
0 .0 0 1
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance
1000
TJ=25OC
f=1MHz
Vsig=50mV
100
Fig.6 Typical Transient Thermal Impedance
100
10
1
10 0.1
0.1 1 10 100
0.01 0.1 1 10 100
Reverse Voltage (V)
t-Pulse Duration (Sec.)
QW-BB020
REV:A
Page 2



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CDBW140-G (CDBW120-G - CDBW140-G) Schottky Barrier Diode CDBW140-G
Comchip Technology
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