CDBV6-54T Datasheet PDF - Comchip Technology

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CDBV6-54T
Comchip Technology

Part Number CDBV6-54T
Description SMD Schottky Barrier Diode Arrays
Page 2 Pages


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SMD Schottky Barrier Diode Arrays
CDBV6-54T/AD/CD/SD/BR-G
Forward Current: 0.2A
Reverse Voltage: 30V
RoHS Device
SMD Diodes Specialist
Features
-Low forward voltage drop.
-Fast switching.
-Ultra-small surface mount package.
-PN junction guard ring for transient and ESD
protection.
-Available in lead Free version.
Mechanical data
-Case: SOD-323, Molded Plastic
-Case material: UL 94V-0 flammability retardant
classification.
-Terminals: Solderable per MIL-STD-202, Method
208
-Marking: Orientation: See diagrams below
-Weight: 0.006 grams (approx.)
-Marking: See diagrams below
A1 C2 C2
C1 A2 A2
AC C2 A2
1
SOD-363
0.087(2.20)
0.071(1.80)
0.053(1.35)
0.045(1.15)
0.044(1.10)
0.035(0.90)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.25)min
Dimensions in inches and (millimeters)
AC C1 C2
1
C1 C2 C3
www.DataSheet4U.com
C1 C1 A2
CDBV6-54AD-G*
Marking: KL6
A1 A1 C2
CDBV6-54CD-G*
Marking: KL7
*Symmetrical configuration, no orientation indicator.
A1 C1 AC
2
CDBV6-54SD-G*
Marking: KL8
A1 A2 AC
2
CDBV6-54BR-G
Marking: KLB
Maximum Rating (at TA=25OC unless otherwise noted)
A1 A2
A3
CDBV6-54T-G
Marking: KLA
Parameter
Symbol
Limits
Unit
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current (Note 1)
Repetitive peak forward current (Note 1)
Forward surge current (Note 1)
@t<1.0s
Power dissipation (Note 1)
Thermal resistance, junction to ambient air (Note 1)
Operation and storage temperature range
VRRM
VRWM
VR
IF
IFRM
IFSM
PD
RθJA
TJ, TSTG
30
200
300
600
200
625
-65 ~ +125
Electrical Characteristics (at TA=25OC unless otherwise noted)
V
mA
mA
mA
mW
OC/W
OC
Parameter
Conditions
Symbol Min Typ Max Unit
Reverse breakdown voltage (Note 2)
Forward voltage
Reverse leakage current (Note 2)
Total capacitance
Reverse recovery time
IR=100μA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1.0V, f=1.0MHz
IF=IR=10mA to IR=1.0mA, RL=100Ω
Notes:
1. Device mounted on FR-4 PCB, 1×0.85×0.062 inch.
2. Short duration test pulse used to minimize self-heating effect.
V(BR)R
VF
IR
CT
trr
30
240
320
400
500
1000
2
10
5
V
mV
μA
pF
nS
QW-BA015
REV:A
Page 1



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SMD Schottky Barrier Diode Arrays
SMD Diodes Specialist
ELECTRICAL CHARACTERISTIC CURVES (CDBV6-54T/AD/CD/SD/BR-G)
Fig.1 Forward Characteristics
1
100m
10m
1m
TA=75OC
TA=25OC
TA=0OC
TA=-40OC
0 .1 m
0
0.2 0.4 0.6 0.8 1.0
VF, Instantaneous Forward Voltage (V)
Fig.2 Reverse Characteristics
100
125OC
10
75OC
1
0.1
0 .0 1
25OC
0OC
0 .0 0 1
0 10 20 30
VR, Instantaneous Reverse Voltage (V)
Fig.3 Capacitance Between
Terminals Characteristics
100
f=1MHz
Fig.4 Power Derating Curve
200
10
100
1
0 5 10 15 20 25 30
VR, Reverse Voltage (V)
0
0 24 50 75 100 125 150
TA, Ambient Temperature (OC)
QW-BA015
REV:A
Page 2



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