C6042 Datasheet PDF - Toshiba Semiconductor

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C6042
Toshiba Semiconductor

Part Number C6042
Description 2SC6042
Page 5 Pages


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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6042
High-Speed, High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC6042
Unit: mm
High-speed switching: tf = 0.2 μs (max) (IC = 0.3A)
High breakdown voltage: VCES = 800 V, VCEO = 375 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
800
800
375
8
1.0
2.0
0.5
1.0
150
55 to 150
V
V
V
V
A
A
W
°C
°C
1. Base
2. Collector
3. Emitter
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-13
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Electrical Characteristics (Ta = 25°C)
2SC6042
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
VCB = 800 V, IE = 0
VEB = 8 V, IC = 0
IC = 1 mA, IB = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 0.2 A
IC = 0.8 A, IB = 0.1 A
IC = 0.8 A, IB = 0.1 A
20 μs
tr
VCC 200 V
IB1 IC
IB2 OUT-
tstg IB21 PUT
INPUT
IB1 = 20 mA, IB2 = 50 mA
tf DUTY CYCLE 1%
Min Typ. Max Unit
― ― 100 μA
― ― 100 μA
800
V
375
V
80 ― ―
100 200
80 ― ―
― ― 1.0 V
― ― 1.3 V
― ― 0.5
― ― 4.5 μs
― ― 0.2
Marking
C6042
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-13
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2.0
Common emitter
Ta=25
Pulse test
1.6
IC – VCE
1.2
0.8
0.4
200
150
100
80
60
40
20
IB = 10 mA
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Collectoremitter voltage VCE (V)
2SC6042
2.0
200
1.6
1.2
IC – VCE
150
100
80
60
40
0.8 20
IB = 10 mA
0.4
Common emitter
Ta=25
Pulse test
0
0 2 4 6 8 10 12
Collectoremitter voltage VCE (V)
1000
100
hFE – IC
Ta = 100°C
25 55
10
Common emitter
VCE = 5 V
Pulse test
1
0.001
0.01
0.1
1
Collector current IC (A)
10
VCE (sat) – IC
10
Common emitter
β= 8
Pulse test
1
0.1
0.01
0.001
25
55
Ta = 100°C
0.01
0.1
1
Collector current IC (A)
10
VBE (sat) – IC
10
Common emitter
IC/IB = 8
Pulse test
1 Ta = 55°C
100
25
0.1
0.001
0.01
0.1
1
Collector current IC (A)
10
2.0
Common emitter
VCE = 5 V
Pulse test
1.6
IC – VBE
1.2
0.8
0.4
Ta = 100°C 25
55
0
0 0.4 0.8 1.2 1.6
Baseemitter voltage VBE (V)
3 2006-11-13
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2SC6042
rth – tw
1000
100
10
1
0.1
0.001
0.01
Curves apply only to limited areas of thermal resistance.
Single nonrepetitive pulse Ta = 25°C
0.1 1 10
Pulse width tw (s)
100 1000
Safe operating area
10
IC max (Pulse)*
100 ms*
1
10 ms*
1 ms*
100 μs*
10 μs*
0.1
DC operation
Ta = 25°C
0.01
*:Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VCEO max
100
Collectoremitter voltage VCE (V)
1000
PC – Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
4 2006-11-13
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