BZT55C8V2 Datasheet PDF - Vishay


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BZT55C8V2
Vishay

Part Number BZT55C8V2
Description Small Signal Zener Diodes
Page 7 Pages

BZT55C8V2 datasheet pdf
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BZT55-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
2.4 to 75
Test current IZT
2.5 to 5
VZ specification
Pulse current
Int. construction
Single
UNIT
V
mA
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZT55-series
BZT55-series
ORDERING CODE
BZT55-series-GS18
BZT55-series-GS08
TAPED UNITS PER REEL
10 000 per 13" reel
2500 per 7" reel
MINIMUM ORDER QUANTITY
10 000/box
12 500/box
PACKAGE
PACKAGE NAME
QuadroMELF SOD-80
WEIGHT
34 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
RthJA 300 K/W
Ptot
Zener current
Junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
IZ
RthJA
Junction temperature
Storage temperature range
Tj
Tstg
Forward voltage (max.)
IF = 200 mA
VF
VALUE
500
PV/VZ
500
175
- 65 to + 175
1.5
UNIT
mW
mA
K/W
°C
°C
V
Rev. 1.7, 22-Nov-11
1 Document Number: 85637
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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BZT55-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
PART NUMBER
VZ at IZT1
IR at VR
IZT1
IZT2 Tamb = Tamb =
25 °C 150 °C
ZZ at IZT1 ZZK at IZT2
f = 1 kHz
V
mA
μA V
MIN. NOM. MAX.
MAX.
MAX.
BZT55C2V4
2.28 2.4 2.56
5
1 < 50 < 100 1
< 85
< 600
BZT55C2V7
2.5 2.7 2.9
5
1
< 10 < 50
1
< 85
< 600
BZT55C3V0
2.8 3.0 3.2
5
1 < 4 < 40 1 < 90 < 600
BZT55C3V3
3.1 3.3 3.5
5
1 < 2 < 40 1 < 90 < 600
BZT55C3V6
3.4 3.6 3.8
5
1 < 2 < 40 1 < 90 < 600
BZT55C3V9
3.7 3.9 4.1
5
1 < 2 < 40 1 < 90 < 600
BZT55C4V3
4 4.3 4.6
5
1 < 1 < 20 1 < 90 < 600
BZT55C4V7
4.4 4.7
5
5
1 < 0.5 < 10 1
< 80
< 600
BZT55C5V1
4.8 5.1 5.4
5
1 < 0.1 < 2
1
< 60
< 550
BZT55C5V6
5.2 5.6
6
5
1 < 0.1 < 2
1
< 40
< 450
BZT55C6V2
5.8 6.2 6.6
5
1 < 0.1 < 2
2
< 10
< 200
BZT55C6V8
6.4 6.8 7.2
5
1 < 0.1 < 2
3
<8
< 150
BZT55C7V5
7 7.5 7.9 5
1 < 0.1 < 2
5
<7
< 50
BZT55C8V2
7.7 8.2 8.7
5
1 < 0.1 < 2 6.2
<7
< 50
BZT55C9V1
8.5 9.1 9.6
5
1 < 0.1 < 2 6.8 < 10
< 50
BZT55C10
9.4 10 10.6
5
1 < 0.1 < 2 7.5 < 15
< 70
BZT55C11
10.4 11 11.6
5
1 < 0.1 < 2 8.2 < 20
< 70
BZT55C12
11.4 12 12.7
5
1 < 0.1 < 2 9.1 < 20
< 90
BZT55C13
12.4 13 14.1
5
1 < 0.1 < 2 10
< 26
< 110
BZT55C15
13.8 15 15.6
5
1 < 0.1 < 2 11
< 30
< 110
BZT55C16
15.3 16 17.1
5
1 < 0.1 < 2 12
< 40
< 170
BZT55C18
16.8 18 19.1
5
1 < 0.1 < 2 13
< 50
< 170
BZT55C20
18.8 20 21.2
5
1 < 0.1 < 2 15
< 55
< 220
BZT55C22
20.8 22 23.3
5
1 < 0.1 < 2 16
< 55
< 220
BZT55C24
22.8 24 25.6
5
1 < 0.1 < 2 18
< 80
< 220
BZT55C27
25.1 27 28.9
5
1 < 0.1 < 2 20
< 80
< 220
BZT55C30
28 30 32
5
1 < 0.1 < 2 22
< 80
< 220
BZT55C33
31 33 35
5
1 < 0.1 < 2 24
< 80
< 220
BZT55C36
34 36 38
5
1 < 0.1 < 2 27
< 80
< 220
BZT55C39
37 39 41 2.5
0.5 < 0.1 < 5
30
< 90
< 500
BZT55C43
40 43 46 2.5
0.5 < 0.1 < 5
33
< 90
< 600
BZT55C47
44 47 50 2.5
0.5 < 0.1 < 5 36 < 110
< 700
BZT55C51
48 51 54 2.5
0.5 < 0.1 < 10 39
< 125
< 700
BZT55C56
52 56 60 2.5 0.5 < 0.1 < 10 43 < 135 < 1000
BZT55C62
58 62 66 2.5 0.5 < 0.1 < 10 47 < 150 < 1000
BZT55C68
64 68 72 2.5 0.5 < 0.1 < 10 51 < 200 < 1000
BZT55C75
70 75 79 2.5 0.5 < 0.1 < 10 56 < 250 < 1500
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin. 35 nA at Tj 25 °C
(1) tp 10 ms, T/tp > 1000
TEMPERATURE
COEFFICIENT
TKVZ
%/K
MIN.
MAX.
- 0.09
- 0.06
- 0.09
- 0.06
- 0.08
- 0.05
- 0.08
- 0.05
- 0.08
- 0.05
- 0.08
- 0.05
- 0.06
- 0.03
- 0.05
0.02
- 0.02
0.02
- 0.05
0.05
0.03 0.06
0.03 0.07
0.03 0.07
0.03 0.08
0.03 0.09
0.03 0.1
0.03 0.11
0.03 0.11
0.03 0.11
0.03 0.11
0.03 0.11
0.03 0.11
0.03 0.11
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
Rev. 1.7, 22-Nov-11
2 Document Number: 85637
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

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BZT55-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
PART NUMBER
VZ at IZT1
IR at VR
IZT1
IZT2 Tamb = Tamb =
25 °C 150 °C
ZZ at IZT1 ZZK at IZT2
f = 1 kHz
V
mA
μA V
MIN. NOM. MAX.
MAX.
MAX.
BZT55B2V4
2.35 2.4 2.45
5
1
< 50 < 100
1
< 85
< 600
BZT55B2V7
2.64 2.7 2.76
5
1 < 10 < 50 1
< 85
< 600
BZT55B3V0
2.94 3.0 3.06
5
1
< 4 < 40
1
< 90
< 600
BZT55B3V3
3.24 3.3 3.36
5
1
< 2 < 40
1
< 90
< 600
BZT55B3V6
3.52 3.6 3.68
5
1
< 2 < 40
1
< 90
< 600
BZT55B3V9
3.82 3.9 3.98
5
1
< 2 < 40
1
< 90
< 600
BZT55B4V3
4.22 4.3 4.38
5
1
< 1 < 20
1
< 90
< 600
BZT55B4V7
4.6 4.7 4.8
5
1 < 0.5 < 10 1
< 80
< 600
BZT55B5V1
5 5.1 5.2
5
1 < 0.1 < 2
1
< 60
< 550
BZT55B5V6
5.48 5.6 5.72
5
1 < 0.1 < 2
1
< 40
< 450
BZT55B6V2
6.08 6.2 6.32
5
1 < 0.1 < 2
2
< 10
< 200
BZT55B6V8
6.66 6.8 6.94
5
1 < 0.1 < 2
3
<8
< 150
BZT55B7V5
7.35 7.5 7.65
5
1 < 0.1 < 2
5
<7
< 50
BZT55B8V2
8.04 8.2 8.36
5
1 < 0.1 < 2 6.2
<7
< 50
BZT55B9V1
8.92 9.1 9.28
5
1 < 0.1 < 2 6.8 < 10
< 50
BZT55B10
9.8 10 10.2
5
1 < 0.1 < 2 7.5 < 15
< 70
BZT55B11
10.78 11 11.22 5
1 < 0.1 < 2 8.2 < 20
< 70
BZT55B12
11.76 12 12.24 5
1 < 0.1 < 2 9.1 < 20
< 90
BZT55B13
12.74 13 13.26 5
1 < 0.1 < 2 10
< 26
< 110
BZT55B15
14.7 15 15.3
5
1 < 0.1 < 2 11
< 30
< 110
BZT55B16
15.7 16 16.3
5
1 < 0.1 < 2 12
< 40
< 170
BZT55B18
17.64 18 18.36 5
1 < 0.1 < 2 13
< 50
< 170
BZT55B20
19.6 20 20.4
5
1 < 0.1 < 2 15
< 55
< 220
BZT55B22
21.55 22 22.45 5
1 < 0.1 < 2 16
< 55
< 220
BZT55B24
23.5 24 24.5
5
1 < 0.1 < 2 18
< 80
< 220
BZT55B27
26.4 27 27.6
5
1 < 0.1 < 2 20
< 80
< 220
BZT55B30
29.4 30 30.6
5
1 < 0.1 < 2 22
< 80
< 220
BZT55B33
32.4 33 33.6
5
1 < 0.1 < 2 24
< 80
< 220
BZT55B36
35.3 36 36.7
5
1 < 0.1 < 2 27
< 80
< 220
BZT55B39
38.2 39 39.8 2.5
1 < 0.1 < 5 30
< 90
< 500
BZT55B43
42.1 43 43.9 2.5
0.5 < 0.1 < 5
33
< 90
< 600
BZT55B47
46.1 47 47.9 2.5
0.5 < 0.1 < 5
36 < 110
< 700
BZT55B51
50 51
52
2.5
0.5 < 0.1 < 10
39
< 125
< 700
BZT55B56
54.9 56 57.1 2.5
0.5 < 0.1 < 10
43
< 135
< 1000
BZT55B62
60.8 62 63.2 2.5
0.5 < 0.1 < 10
47
< 150
< 1000
BZT55B68
66.6 68 69.4 2.5
0.5 < 0.1 < 10
51
< 200
< 1000
BZT55B75
73.5 75 76.5 2.5
0.5 < 0.1 < 10
56
< 250
< 1500
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin. 35 nA at Tj 25 °C
(1) tp 10 ms, T/tp > 1000
TEMPERATURE
COEFFICIENT
TKVZ
%/K
MIN.
MAX.
- 0.09
- 0.06
- 0.09
- 0.06
- 0.08
- 0.05
- 0.08
- 0.05
- 0.08
- 0.05
- 0.08
- 0.05
- 0.06
- 0.03
- 0.05
0.02
- 0.02
0.02
- 0.05
0.05
0.03 0.06
0.03 0.07
0.03 0.07
0.03 0.08
0.03 0.09
0.03 0.1
0.03 0.11
0.03 0.11
0.03 0.11
0.03 0.11
0.03 0.11
0.03 0.11
0.03 0.11
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
0.04 0.12
Rev. 1.7, 22-Nov-11
3 Document Number: 85637
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZT55-Series
Vishay Semiconductors
600
500
400
300
200
100
0
0 40 80 120 160 200
95 9602 Tamb - Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
1000
15
10
5
IZ = 5 mA
0
-5
0
95 9600
10 20 30 40
VZ - Z-Voltage (V)
50
Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage
200
Tj = 25 °C
100
IZ = 5 mA
10
150
VR = 2 V
Tj = 25 °C
100
50
1
0
95 9598
5 10 15 20
VZ - Z-Voltage (V)
25
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
1.3
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
1.1
4 x 10-4/K
2 x 10-4/K
1.0 0
- 2 x 10-4/K
0.9 - 4 x 10-4/K
0.8
- 60
0
60 120 180 240
95 9599 Tj - Junction Temperature (°C)
Fig. 3 - Typical Change of Working Voltage vs. Junction
Temperature
0
0
95 9601
5 10 15 20
VZ - Z-Voltage (V)
25
Fig. 5 - Diode Capacitance vs. Z-Voltage
100
10
Tj = 25 °C
1
0.1
0.01
0.001
0
95 9605
0.2 0.4 0.6 0.8
VF - Forward Voltage (V)
1.0
Fig. 6 - Forward Current vs. Forward Voltage
Rev. 1.7, 22-Nov-11
4 Document Number: 85637
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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