BZT52H-B13 Datasheet PDF - NXP

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BZT52H-B13
NXP

Part Number BZT52H-B13
Description Single Zener diodes
Page 13 Pages


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BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
„ Total power dissipation: 830 mW
„ Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
„ Small plastic package suitable for
surface-mounted design
„ Low differential resistance
„ AEC-Q101 qualified
1.3 Applications
„ General regulation functions
1.4 Quick reference data
Table 1.
Symbol
VF
Ptot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
IF = 10 mA
Tamb 25 °C
Min Typ Max Unit
[1] - - 0.9 V
[2] - - 375 mW
[3] - - 830 mW
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
Simplified outline
[1]
12
Graphic symbol
12
006aaa152



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NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
3. Ordering information
4. Marking
Table 3. Ordering information
Type number
Package
Name
Description
BZT52H-B2V4 to
BZT52H-C75[1]
-
plastic surface-mounted package; 2 leads
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
Version
SOD123F
Table 4. Marking codes
Type number
Marking
code
BZT52H-B2V4 DC
BZT52H-B2V7 DD
BZT52H-B3V0 DE
BZT52H-B3V3 DF
BZT52H-B3V6 DG
BZT52H-B3V9 DH
BZT52H-B4V3 DJ
BZT52H-B4V7 DK
BZT52H-B5V1 DL
BZT52H-B5V6 DM
BZT52H-B6V2 DN
BZT52H-B6V8 DP
BZT52H-B7V5 DQ
BZT52H-B8V2 DR
BZT52H-B9V1 DS
BZT52H-B10 DT
BZT52H-B11
DU
BZT52H-B12 DV
BZT52H-B13 DW
Type number
BZT52H-B15
BZT52H-B16
BZT52H-B18
BZT52H-B20
BZT52H-B22
BZT52H-B24
BZT52H-B27
BZT52H-B30
BZT52H-B33
BZT52H-B36
BZT52H-B39
BZT52H-B43
BZT52H-B47
BZT52H-B51
BZT52H-B56
BZT52H-B62
BZT52H-B68
BZT52H-B75
-
Marking
code
DX
DY
DZ
E1
E2
E3
E4
E5
E6
E7
E8
E9
EA
EB
EC
ED
EE
EF
-
Type number
BZT52H-C2V4
BZT52H-C2V7
BZT52H-C3V0
BZT52H-C3V3
BZT52H-C3V6
BZT52H-C3V9
BZT52H-C4V3
BZT52H-C4V7
BZT52H-C5V1
BZT52H-C5V6
BZT52H-C6V2
BZT52H-C6V8
BZT52H-C7V5
BZT52H-C8V2
BZT52H-C9V1
BZT52H-C10
BZT52H-C11
BZT52H-C12
BZT52H-C13
Marking
code
B3
B4
B5
B6
B7
B8
B9
BA
BB
BC
BD
BE
BF
BG
BH
BJ
BK
BL
BM
Type number
BZT52H-C15
BZT52H-C16
BZT52H-C18
BZT52H-C20
BZT52H-C22
BZT52H-C24
BZT52H-C27
BZT52H-C30
BZT52H-C33
BZT52H-C36
BZT52H-C39
BZT52H-C43
BZT52H-C47
BZT52H-C51
BZT52H-C56
BZT52H-C62
BZT52H-C68
BZT52H-C75
-
Marking
code
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
C1
C2
C3
C4
C5
C6
-
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
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NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IF forward current
IZSM non-repetitive peak
reverse current
-
-
PZSM
Ptot
Tj
Tamb
Tstg
non-repetitive peak
reverse power dissipation
total power dissipation Tamb 25 °C
junction temperature
ambient temperature
storage temperature
[1] -
[2] -
[3] -
-
65
65
Max Unit
250 mA
see
Table 8, 9
and 10
40 W
375
830
150
+150
+150
mW
mW
°C
°C
°C
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1] - - 330 K/W
[2] - - 150 K/W
[3] - - 70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
3 of 13



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NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 10 mA
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
[1] - - 0.9 V
Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24
Tj = 25 °C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
VZ (V);
IZ = 5 mA
Maximum differential Reverse
resistance rdif (Ω)
current IR (μA)
Min Max IZ = 1 mA IZ = 5 mA Max VR (V)
2V4 B 2.35 2.45 400
85
50 1
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Min Max
3.5 0.0
C 2.2 2.6
2V7 B 2.65 2.75 500
83
20 1
3.5 0.0
C 2.5 2.9
3V0 B 2.94 3.06 500
95
10 1
3.5 0.0
C 2.8 3.2
3V3 B 3.23 3.37 500
95
5 1 3.5 0.0
C 3.1 3.5
3V6 B 3.53 3.67 500
95
5 1 3.5 0.0
C 3.4 3.8
3V9 B 3.82 3.98 500
95
3 1 3.5 0.0
C 3.7 4.1
4V3 B 4.21 4.39 500
95
3 1 3.5 0.0
C 4.0 4.6
4V7 B 4.61 4.79 500
78
3 2 3.5 0.2
C 4.4 5.0
5V1 B 5.0 5.2 480
60
2 2 2.7 1.2
C 4.8 5.4
5V6 B 5.49 5.71 400
40
1 2 2.0 2.5
C 5.2 6.0
6V2 B 6.08 6.32 150
10
3 4 0.4 3.7
C 5.8 6.6
6V8 B 6.66 6.94 80
8
2 4 1.2 4.5
C 6.4 7.2
7V5 B 7.35 7.65 80 10 1 5 2.5 5.3
C 7.0 7.9
8V2 B 8.04 8.36 80
10
0.7 5
3.2 6.2
C 7.7 8.7
Diode
capacitance
Cd (pF)[1]
Max
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
300 6.0
300 6.0
300 6.0
200 6.0
200 6.0
150 4.0
150 4.0
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
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