Medium voltage fast-switching NPN power transistor
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Electronic ballast for fluorescent lighting
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the BULT3P3, its
complementary PNP transistor.
Figure 1. Internal schematic diagram
Table 1. Device summary
Doc ID 16299 Rev 1