BULT3N4 Datasheet PDF - ST Microelectronics

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BULT3N4
ST Microelectronics

Part Number BULT3N4
Description Power Bipolar Medium voltage fast-switching NPN power transistor
Page 8 Pages


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BULT3N4
Medium voltage fast-switching NPN power transistor
Features
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Application
Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the BULT3P3, its
complementary PNP transistor.
SOT-32
1
2
3
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
BULT3N4
BULT3N4
September 2009
Package
SOT-32
Doc ID 16299 Rev 1
Packing
Tube
1/8
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Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
(IC = 0, IB = 1.5 A, tp < 100 µs, Tj < 150°C)
Collector current
Collector peak current (tP < 5 ms)
Base current
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJC Thermal resistance junction-case max
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Value
400
200
V(BR)EBO
3
6
1.5
3
32
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Value
3.9
Unit
°C/W
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BULT3N4
2 Electrical characteristics
Electricwawl cwh.DaaratacStheereist4tUic.csom
Tcase = 25 °C unless otherwise specified
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current VCE = 400 V
(VBE = 0)
VCE = 400 V TC = 125 °C
0.1 mA
0.5 mA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 10 mA
9 18 V
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IB = 0)
IC = 10 mA
200
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 0.7 A _ IB = 0.1 A
IC = 1 A _ IB = 0.2 A
0.4 V
0.5 V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 0.5 A__ IB = 0.1 A
IC = 1 A ____ IB = 0.2 A
IC = 2 A ____ IB = 0.4 A
1V
1.1 V
1.3 V
hFE DC current gain
IC =10 mA
IC = 0.75 A
IC = 2 A
VCE = 5 V
VCE = 5 V
VCE = 5 V
10
22 28 36
4
Resistive load
tr Rise time
ts Storage time
tf Fall time
IC = 0.7 A _ VCC = 150 V
IB(on) = - IB(off) = 140 mA
Tp = 30 µs
80
1.2 1.6
100 130
ns
µs
ns
Inductive load
ts Storage time
tf Fall time
IC = 1 A _ _ IB(on) = 100 mA
VBE(off) = - 5 V RBB = 0
Vclamp = 150 V L = 1 mH
120 200
50 90
ns
ns
1. Pulse test: pulse duration 300 µs, duty cycle 2 %
Doc ID 16299 Rev 1
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Electrical characteristics
2.1 Test circuits
Figure 2. Resistive load switching test circuit
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1. Fast electronic switch
2. Non-inductive resistor
Figure 3. Inductive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
3. Fast recovery rectifier
4/8 Doc ID 16299 Rev 1



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BULT3N4 Power Bipolar Medium voltage fast-switching NPN power transistor BULT3N4
ST Microelectronics
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