BUK9628-55A Datasheet PDF - NXP Semiconductors

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BUK9628-55A
NXP Semiconductors

Part Number BUK9628-55A
Description N-channel TrenchMOS logic level FET
Page 14 Pages


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BUK9628-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 17 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C
resistance
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
VGS = 5 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 34 A; Vsup 55 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 42 A
- - 99 W
- 22 25 m
- - 30 m
- 24 28 m
- - 57.8 mJ



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BUK9628-55A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK9628-55A
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK9628-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
2 of 14



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NXP Semiconductors
BUK9628-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 100 °C; VGS = 5 V; see Figure 1
Tmb = 25 °C; VGS = 5 V; see Figure 1;
see Figure 3
Tmb = 25 °C; pulsed; tp 10 µs;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
VGSM
peak gate-source voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
pulsed; tp 50 µs
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
ID = 34 A; Vsup 55 V; RGS = 50 ;
VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Max Unit
- 55 V
- 55 V
-10 10 V
- 30 A
- 42 A
- 168 A
- 99 W
-55 175 °C
-55 175 °C
-15 15 V
- 42 A
- 168 A
- 57.8 mJ
120
Ider
(%)
80
03aa24
120
Pder
(%)
80
03na19
40 40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9628-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
3 of 14



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BUK9628-55A
N-channel TrenchMOS logic level FET
103
ID
(A)
102
RDSon = VDS / ID
10 P
tp
δ=
T
tp
T
1
1
t
D.C.
10
03nc03
tp = 10 μs
VDS (V)
100 μs
1 ms
10 ms
100 ms
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9628-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
4 of 14



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