BUK9610-55A Datasheet PDF - NXP Semiconductors

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BUK9610-55A
NXP Semiconductors

Part Number BUK9610-55A
Description N-channel TrenchMOS logic level FET
Page 13 Pages


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BUK9610-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 16 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 5 V; Tj = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 11
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 200 W
- - 11 m
- 7 9 m
- 8 10 m



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NXP Semiconductors
BUK9610-55A
N-channel TrenchMOS logic level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 55 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge VGS = 5 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 13
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- - 333 mJ
- 28 - nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK9610-55A
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK9610-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 February 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
BUK9610-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
VGS = 5 V; Tj = 25 °C; see Figure 1;
see Figure 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
VGS = 5 V; Tj = 100 °C; see Figure 1
Tmb = 25 °C; pulsed; tp 10 µs;
see Figure 3
Tmb = 25 °C; see Figure 2
Tmb = 25 °C
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
pulsed; tp 10 µs; Tmb = 25 °C
ID = 75 A; Vsup 55 V; RGS = 50 ;
VGS = 5 V; Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
Min
-
-
-15
[1] -
[2] -
[1] -
-
Max Unit
55 V
55 V
15 V
75 A
100 A
70 A
400 A
- 200 W
-55 175 °C
-55 175 °C
[2] -
[1] -
-
100 A
75 A
400 A
- 333 mJ
120
ID
(A)
100
03nf89
Capped at 75 A due to package
80
60
40
20
0
25 50 75 100 125 150 175 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9610-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK9610-55A
N-channel TrenchMOS logic level FET
103
ID
(A)
RDSon = VDS / ID
102
Capped at 75 A
due to package
10 P
tp
δ=
T
tp
T
1
1
t
DC
10
03nf86
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
mounted on printed-circuit board;
minimum footprint
Min Typ Max Unit
- - 0.75 K/W
- 50 - K/W
1 03nf87
Zth(j-mb)
(K/W)
101
102
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
P δ = tp
T
103
106
105
104
103
102
tp
T
t
101
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9610-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 February 2011
© NXP B.V. 2011. All rights reserved.
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