BUK7Y25-60E Datasheet PDF - NXP Semiconductors

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BUK7Y25-60E
NXP Semiconductors

Part Number BUK7Y25-60E
Description N-channel 60V 25m ohm standard level MOSFET
Page 13 Pages


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BUK7Y25-60E
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
7 May 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
ID = 10 A; VDS = 48 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 60 V
- - 34 A
- - 64 W
-
15.7 25
- 5.6 - nC
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BUK7Y25-60E
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7Y25-60E
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
BUK7Y25-60E
Marking code
72560E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
BUK7Y25-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
Min Max Unit
- 60 V
- 60 V
-20 20
V
- 34 A
- 24 A
- 136 A
- 64 W
-55 175 °C
© NXP B.V. 2013. All rights reserved
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BUK7Y25-60E
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
-55 175 °C
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
-
ID = 34 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1][2]
-
34 A
136 A
23.4 mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
40
ID
(A)
30
003aai505
120
Pder
(%)
80
03aa16
20
40
10
0
0 30 60 90 120 150 180
Tj (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7Y25-60E
Product data sheet
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7 May 2013
© NXP B.V. 2013. All rights reserved
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102
IAL
(A)
10
1
10-1
BUK7Y25-60E
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
003aai506
(1)
(2)
(3)
10-2
10-3
10-2
10-1
1
tAL (ms)
10
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
Limit RDSon = VDS / ID
003aai507
tp = 10 us
100 us
1 DC
1 ms
10-1
1
10 ms
100 ms
10
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
- - 2.31 K/W
BUK7Y25-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
BUK7Y25-60E pdf

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