BUK762R4-60E Datasheet PDF - NXP Semiconductors

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BUK762R4-60E
NXP Semiconductors

Part Number BUK762R4-60E
Description N-channel TrenchMOS standard level FET
Page 14 Pages


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BUK762R4-60E
N-channel TrenchMOS standard level FET
Rev. 2 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding
environments due to 175 °C rating
True standard level gate with VGS(th)
rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Conditions
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11
ID = 25 A; VDS = 48 V; VGS = 10 V;
see Figure 13; see Figure 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
[1] - - 120 A
- - 357 W
- 1.9 2.4 m
- 45.5 - nC



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NXP Semiconductors
BUK762R4-60E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK762R4-60E
D2PAK
4. Marking
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
Table 4. Marking codes
Type number
BUK762R4-60E
Marking code
BUK762R4-60E
BUK762R4-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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NXP Semiconductors
BUK762R4-60E
N-channel TrenchMOS standard level FET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; pulsed; tp 10 µs;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
ID = 120 A; Vsup 60 V; RGS = 50 ;
VGS = 60 V; Tj(init) = 25 °C; unclamped;
see Figure 3
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
Min
-
-
-20
[1] -
[1] -
-
Max
60
60
20
120
120
1047
Unit
V
V
V
A
A
A
- 357 W
-55 175 °C
-55 175 °C
[1] -
120 A
- 1047 A
[2][3] -
660 mJ
BUK762R4-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
3 of 14



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NXP Semiconductors
BUK762R4-60E
N-channel TrenchMOS standard level FET
300
ID
(A)
240
180
120
60
0
0
003aaf491
(1)
50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
IAL
(A)
102
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag355
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK762R4-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
4 of 14



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