BTA41 Datasheet PDF - Sirectifier Semiconductors

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BTA41
Sirectifier Semiconductors

Part Number BTA41
Description Discrete Triacs
Page 4 Pages


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BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
G
T2
T1
T2
G
T1
Dimensions TO-247AD
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F 5.4 6.2
G 1.65 2.13
H - 4.5
J 1.0 1.4
K 10.8 11.0
L 4.7 5.3
M 0.4 0.8
N 1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
- 0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x I GT , tr <_ 100 ns
VDSM/V RSM
Non repetitive surge peak off-state
voltage
TO-247AD
Tc = 80 °C
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
Tj = 25°C
41
420
400
880
50
VDRM/VRRM
+ 100
A
A
A²s
A/µs
V
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 125°C
Tj = 125°C
8
1
- 40 to + 150
- 40 to + 125
A
W
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
IGT (1)
VGT
VD = 12 V
RL = 33
I - II - III
IV
ALL
VGD VD = VDRM RL = 3.3 kTj = 125°C ALL
IH (2)
IL
IT = 500 mA
IG = 1.2 IGT
I- III-IV
II
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
50
100
1.3
0.2
80
70
160
500
10
Unit
mA
V
V
mA
mA
V/µs
A/ms



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BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
STATIC CHARACTERISTICS
Symbol
VTM (2)
Vto (2)
Rd (2)
IDRM
IRRM
Test Conditions
ITM = 60 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
Parameter
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
10
5
5
Unit
V
V
m
µA
mA
Value
0.6
50
Unit
°C/W
°C/W
PRODUCT SELECTOR
Part Number
BTB/BTA41
Voltage (xxx)
200 V ~~ 1000 V
XX
Sensitivity
50 mA
Type
Standard
Package
TO-247AD
OTHER INFORMATION
Part Number
Marking
Weight
Base
quantity
Packing
mode
BTB/BTA41
BTB/BTA41
4.5 g 120 Bulk



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BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
P (W)
50
40
30
20
180°
α
10 α
IT(R MS ) (A)
0
0 5 10 15 20 25 30 35 40
F ig. 3: R elative variation of thermal impeda nce
versus pulse duration.
K =[Zth/R th]
1.E +00
Zth(j-c)
1.E -01
1.E -02
Z th( j-a )
B TA/B T B 41
1.E -03
tp (s )
1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03
F ig. 5: S urge peak on-s tate current vers us
number of cycles .
F ig. 2: R MS on-state current vers us cas e
temperature (full cycle).
IT(R MS ) (A)
45
40
35
30
25
20
15
10
5
0 0 25
B TB 41
B TA41
α = 180°
Tc(° C)
50 75
100 125
F ig. 4: On-s tate cha racteris tics (maximum
values ).
ITM (A)
400
100
T j max
10 Tj=25°C
Tj max.:
V to = 0.85 V
VTM (V)
R d = 10 m
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
F ig. 6: Non-repetitive s urge pea k on-s tate
current for a s inus oidal puls e with width
tp < 10 ms, and corresponding value of I²t.
ITS M (A)
450
400
350
300
250
200
150
100
R epetitive
T c=70°C
50
0
1
Non repetitive
T j initial=25°C
Number of cycles
10 100
t=20ms
One cycle
1000
ITS M (A), I² t (A² s )
10000
1000
dI/dt limitation:
50A /µs
ITS M
I²t
1 000. 0 1
tp (ms )
0.10 1.00
T j initial=25°C
10.00



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BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
F ig. 7: R elative varia tion of gate trigger current,
holding current and latching current vers us
junction temperature (typical values).
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
2.5
2.0
IG T
1.5
IH & IL
1.0
0.5
Tj(° C )
0.0-40 -20 0 20 40 60 80 100 120 140
F ig. 8: R ela tive variation of critica l rate of decreas e
of main current vers us (dV /dt)c (typica l values ).
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0 . 40 . 1
(dV /dt)c (V /µs )
1.0 10.0
100.0
F ig. 9: R elative varia tion of critical rate of
decreas e of main current vers us junction
te mpe ra ture.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1 Tj (° C)
0 0 25 50 75
100 125



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