BSM10GP60 Datasheet PDF - eupec GmbH

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BSM10GP60
eupec GmbH

Part Number BSM10GP60
Description IGBT-Module
Page 11 Pages


BSM10GP60 datasheet pdf
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM10GP60
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
www.DataSheet4U.com
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value
TC = 80°C
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
Tvj = 25°C
Tvj = 150°C
Tvj = 25°C
Tvj = 150°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Tc = 80 °C
TC = 25 °C
tP = 1 ms,
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
T C = 80 °C
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
I2t - value
Tc = 80 °C
tP = 1 ms
VR = 0V, tp = 10ms, Tvj = 125°C
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Tc = 80 °C
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
prepared by: Andreas Schulz
approved by: MN.Hierholzer
date of publication:17.09.1999
revision: 4
VRRM
IFRMSM
Id
IFSM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
1600
40
10
300
230
450
260
600
10
20
20
80
+/- 20V
10
20
50
600
10
20
20
80
+/- 20V
10
20
V
A
A
A
A
A2s
A2s
V
A
A
A
W
V
A
A
A2s
V
A
A
A
W
V
A
A
1(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM10GP60
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
www.DataSheet4U.cComharakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Schleusenspannung
threshold voltage
Tvj = 150°C
Ersatzwiderstand
slope resistance
Tvj = 150°C
Sperrstrom
reverse current
Tvj = 150°C,
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
I F = 10 A
V R = 1600 V
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
VGE = 15V, Tvj = 25°C,
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C,
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C,
IC =
IC =
IC =
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C,
VGE = 0V, Tvj =125°C,
VCE =
VCE =
VCE = 0V, VGE =20V, Tvj =25°C
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
tP 10µs, VGE 15V, RG =
Tvj125°C,
VCC =
dI/dt =
10 A
10 A
0,35 mA
600 V
600 V
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
75 nH
300 V
82 Ohm
75 nH
82 Ohm
360 V
600 A/µs
min. typ. max.
VF
-
0,9 0,95
V
V(TO)
-
- 0,8 V
rT - - 10,5 m
IR - 1 - mA
RAA’+CC’
-
8
- m
VCE sat
min.
-
-
typ.
1,95
2,2
max.
2,35
-
V
V
VGE(TO) 4,5 5,5 6,5
V
Cies - 0,6 - nF
ICES - 0,5 500 µA
- 0,8 - mA
IGES
-
- 300 nA
td,on - 35 - ns
- 35 - ns
tr - 30 - ns
- 35 - ns
td,off - 220 - ns
- 230 -
ns
tf - 18 - ns
- 30 - ns
Eon - 0,4 - mWs
Eoff - 0,3 - mWs
ISC - 45 - A
2(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM10GP60
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
www.DataSheet4U.cMomodul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
VGE = 0V, Tvj = 25°C, IF =
VGE = 0V, Tvj = 125°C, IF =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
10 A
10 A
400A/µs
300 V
300 V
400A/µs
300 V
300 V
400A/µs
300 V
300 V
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC = 10,0 A
VGE = 15V, Tvj = 125°C, IC = 10,0 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C, IC = 0,35mA
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE =
VGE = 0V, Tvj = 125°C, VCE =
600 V
600 V
VCE = 0V, VGE = 20V, Tvj = 25°C
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
Tvj = 25°C,
forward voltage
Tvj = 125°C,
IF =
IF =
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R100
deviation of R100
TC = 25°C
TC = 100°C, R100 = 493
Verlustleistung
power dissipation
B-Wert
B-value
TC = 25°C
R2 = R1 exp [B(1/T2 - 1/T1)]
10,0 A
10,0 A
min. typ. max.
LσCE
-
- 100 nH
RCC’+EE’
-
11
- m
min. typ. max.
VF - 1,25 1,7 V
- 1,2 -
V
IRM - 12 -
- 15 -
A
A
Qr - 0,85 - µAs
- 1,35 - µAs
ERQ
VCE sat
-
-
min.
-
-
0,16
0,26
typ.
1,95
2,2
-
-
max.
2,35
-
mWs
mWs
V
V
VGE(TO) 4,5 5,5 6,5
V
Cies - 0,6 - nF
ICES - 0,5 500 µA
- 0,8 - mA
IGES
-
- 300 nA
min. typ. max.
VF - 1,25 1,7 V
- 1,2 -
V
min. typ. max.
R25 - 5 - k
R/R -5
5%
P25 20 mW
B25/50
3375
K
3(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM10GP60
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
www.DataSheet4U.com
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Trans. Bremse/ Trans. Brake
Diode Bremse/ Diode Brake
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
λPaste=1W/m*K
λgrease=1W/m*K
RthJC
RthCK
Tvj
Top
Tstg
min.
-
-
-
-
-
-
-
-
-
-40
-40
typ.
-
-
-
-
-
0,08
0,04
0,08
max.
1
1,5
2,3
1,5
2,3
-
-
-
- 150
- 125
- 125
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
°C
°C
°C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
Al2O3
225
M 3 Nm
±10%
G 180 g
4(11)
DB-PIM-9.xls



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BSM10GP60 IGBT-Module BSM10GP60
eupec GmbH
BSM10GP60 pdf

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