BRM501D Datasheet PDF - BLUE ROCKET ELECTRONICS

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BRM501D
BLUE ROCKET ELECTRONICS

Part Number BRM501D
Description N-CHANNEL MOSFET
Page 7 Pages


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BRM501D
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 N MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
ESD 防护,耗尽型(VGS(th)典型值-1.8V)。
ESD Improved capability, Depletion mode(VGS(th)=-1.8V,type).
用途 / Applications
适用于高压开关驱动电路。
This device is suitable for load switch of high voltage.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1S
PIN 2G
PIN 3D
印章代码 / Marking
Marking
H501
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BRM501D
Rev.D Nov.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Continuous
Drain Current- Pulsed
Continuous Source Current
Maximum Pulsed Current
Gate-to-Source Voltage
Gate source ESD
Power Dissipation
Junction-to-Ambient
Junction Temperature Range
Storage Temperature Range
Temperature for Soldering
符号
Symbol
VDS
ID(TC=25)
ID(TC=70)
IDM
IS
ISM
VGS
VESD
PD
RθJA
TJ,
TSTG
TL
数值
Rating
600
30
24
120
25
100
±20
300
0.5
250
150
-55 to 150
300
单位
Unit
V
mA
mA
mA
mA
mA
V
V
W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage.
Off-state Drain to Source Current
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Forward Transconductance
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
符号
Symbol
BVDSS
IDSS
IGSS
ID(off)
VGS(th)
RDS(on)(1)
RDS(on)(2)
gFS
VSD
Ciss
Coss
Crss
测试条件
Test Conditions
VGS=-5.0V ID=250μA
VDS=25V VGS=0V
VGS=±20V VDS=0V
VDS=600V VGS=5.0V
VDS=3.0V ID=8.0μA
VGS=0V
ID=3.0mA
VGS=10V ID=16mA
VDS=50V ID=0.01A
VGS=-5.0V IF=16mA
VDS=25V
f=1.0MHz
VGS=-5.0V
最小值 典型值 最大值 单位
Min Typ Max Unit
600 V
12 mA
±10 μA
0.1 μA
-2.7 -1.8 -1.0 V
400 700
500 800
0.008 0.017
S
1.2 V
50 pF
4.53 pF
1.08 pF
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BRM501D
Rev.D Nov.-2015
DATA SHEET
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Reverse Recovery Time
Reverse Recovery Charge
符号
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
trr
Qrr
测试条件
Test Conditions
ID=0.01A VDD=300V
RG=6.0
VGS=-5.0~7.0V
ID=0.01A VDD=400V
VGS =-5Vto5V
IF=0.01A Tj=25
VR=300V
dIF/dt=100A/us
最小值 典型值 最大值 单位
Min Typ Max Unit
9.9 ns
55.8 ns
56.4 ns
136 ns
1.14 nC
0.5 nC
0.37 nC
243 ns
636 nC
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BRM501D
Rev.D Nov.-2015
电参数曲线图 / Electrical Characteristic Curve
PD – TC
DATA SHEET
ID – TC
ID – VDS
ID – VGS
Ciss,Coss,Crss-VDS
BVDSS – Tj
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BRM501D N-CHANNEL MOSFET BRM501D
BLUE ROCKET ELECTRONICS
BRM501D pdf

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