BRI4N70 Datasheet PDF - BLUE ROCKET ELECTRONICS

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BRI4N70
BLUE ROCKET ELECTRONICS

Part Number BRI4N70
Description N-CHANNEL MOSFET
Page 6 Pages


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BRI4N70
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions
TO-251 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-251 Plastic Package.
特征 / Features
热阻低,开关速度快。
Low thermal resistance, fast switching.
用途 / Applications
用于电子变压器,开关电源。
For Electronic transformer, Switch mode power supply.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1
2
3
PIN1G
PIN 2D
PIN 3S
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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BRI4N70
Rev.D Nov.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
符号
Symbol
VDS
VGS
ID(Tc=25)
ID(Tc=100)
IDM
EAS
Ptot
Tj
Tstg
Rθ-JC
Rθ-JA
数值
Rating
700
±30
4.0
2.5
16
260
106
150
-55~150
1.18
62.5
单位
Unit
V
V
A
A
A
mJ
W
/W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
符号
测试条件
最小值 典型值 最大值 单位
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
BVDSS
IDSS
IGSS
VGS=0V
VDS=700V
Tj=25
VDS=560V
Tj=125
VGS=±30V
ID=250μA
VGS=0V
VGS=0V
700
V
1 μA
10 μA
±100 nA
Continuous Diode Forward Current
Drain-Source Diode Forward
Voltage
Static Drain-Source
On-Resistance
IS
VSD
RDS(on)
Is=4.0A
Tj=25
VGS=10V
VGS=0V
ID=2.0A
4.0 A
1.4 V
2.8
Gate Threshold Voltage
VGS(TH) VGS=VDS ID=250μA
2.0
4.0 V
Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Turn-Off Delay Time
Forward Transconductance
trr
Qrr
Ciss
td(off)
gfs
If=4.0A
Tj=25
di/dt=100A/μs
VGS =0V
VF=1.0MHZ
VDD=350V
RG=25
VDS=40V
VDS=25V
ID=4.0A
ID=2.0A
250 nS
1.5 uC
520 pF
25 ns
4.0 S
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Qg
Qgs
Qgd
ID=4.0A
VGS=10V
VDS=560V
17.4 nC
4.8 nC
5.4 nC
注释(Notes):
脉冲宽度:以最高节温为限制 /Repetitive rating: Pulse width limited by maximum junction temperature
初始结温=25,VDD=50V,L=30mH,RG=25Ω,IAS=4.0A/Starting Tj=25,VDD=50V,L=30mH,RG=25,IAS=4.0A
脉冲测试:脉冲宽度≤300μs,占空比≤2% / Pulse Test:Pulse width300μs,Duty cycle2%
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BRI4N70
Rev.D Nov.-2015
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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BRI4N70
Rev.D Nov.-2015
外形尺寸图 / Package Dimensions
DATA SHEET
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BRI4N70 N-CHANNEL MOSFET BRI4N70
BLUE ROCKET ELECTRONICS
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