BLF184XRG Datasheet PDF - NXP

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BLF184XRG
NXP

Part Number BLF184XRG
Description Power LDMOS transistor
Page 13 Pages


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BLF184XRG
Power LDMOS transistor
Rev. 1 — 18 December 2014
Product data sheet
1. Product profile
1.1 General description
A 700 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 108
VDS
PL
(V) (W)
50 700
50 750
Gp
(dB)
23.9
23.5
D
(%)
73.5
81.9
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications



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NXP Semiconductors
BLF184XRG
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol



[1]    


V\P
Table 3. Ordering information
Type number Package
Name Description
BLF184XRG -
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1214C
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min
-
6
65
[1] -
Max
135
+11
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
transient thermal impedance from junction
to case
Tj = 150 C
Tj = 150 C; tp = 100 s;
= 20 %
[1][2] 0.18
[3] 0.065
K/W
K/W
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 3.
BLF184XRG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 13



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NXP Semiconductors
BLF184XRG
Power LDMOS transistor

=WK MF
.:










DDD









WS V

(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.75 mA
VGS(th)
VGSq
IDSS
IDSX
IGSS
RDS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state
resistance
VDS = 10 V; ID = 275 mA
VDS = 50 V; ID = 50 mA
VGS = 0 V; VDS = 50 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VGS = VGS(th) + 3.75 V;
ID = 9.625 A
Min
135
1.25
-
-
-
-
-
Typ
-
1.9
1.6
-
38.5
-
0.16
Max
-
2.25
-
1.4
-
140
-
Unit
V
V
V
A
A
nA
BLF184XRG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 13



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NXP Semiconductors
BLF184XRG
Power LDMOS transistor
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Crs
Ciss
Coss
feedback capacitance
input capacitance
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ
- 3.1
- 292
- 107
Max Unit
- pF
- pF
- pF
Table 8. RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
Gp power gain
PL = 700 W
RLin input return loss PL = 700 W
D
drain efficiency
PL = 700 W
22.8 23.9 -
- 20 13
71 73.5 -
dB
dB
%

&RVV
S)

DDD



     
9'6 9
Fig 2.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF184XRG is capable of withstanding a load mismatch corresponding to
VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 100 mA; PL = 700 W pulsed; f = 108 MHz.
BLF184XRG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 13



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