BLF182XR Datasheet PDF - NXP

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BLF182XR
NXP

Part Number BLF182XR
Description Power LDMOS transistor
Page 11 Pages


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BLF182XR; BLF182XRS
Power LDMOS transistor
Rev. 1 — 23 July 2015
Objective data sheet
1. Product profile
1.1 General description
A 250 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 250
Gp
(dB)
28
D
(%)
72
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications



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NXP Semiconductors
BLF182XR; BLF182XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF182XR (SOT1121A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLF182XRS (SOT1121B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol



[1]





V\P

 
[1]





V\P
Table 3. Ordering information
Type number Package
Name Description
BLF182XR -
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
BLF182XRS -
earless flanged ceramic package; 4 leads
Version
SOT1121A
SOT1121B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min
-
6
65
[1] -
Max
135
+11
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLF182XR_BLF182XRS
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 11



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NXP Semiconductors
BLF182XR; BLF182XRS
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
transient thermal impedance from junction
to case
Tj = 115 C
Tj = 150 C; tp = 100 s;
= 20 %
[1][2] <tbd>
[3] <tbd>
K/W
K/W
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See <tbd>.
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 1.0 mA
VGS(th)
VGSq
IDSS
IDSX
IGSS
RDS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state
resistance
VDS = 10 V; ID = 100 mA
VDS = 50 V; ID = 50 mA
VGS = 0 V; VDS = 50 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VGS = VGS(th) + 3.75 V;
ID = 3.5 A
Min
135
1.25
-
-
-
-
-
Typ
-
1.8
1.6
-
14.3
-
0.43
Max
-
2.25
-
1.4
-
140
-
Unit
V
V
V
A
A
nA
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Crs
Ciss
Coss
feedback capacitance
input capacitance
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ
- 0.7
- 116
- 37
Max Unit
- pF
- pF
- pF
Table 8. RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
Gp power gain
PL = 250 W
RLin input return loss PL = 250 W
D
drain efficiency
PL = 250 W
<tbd>
-
<tbd>
28
10
72
-
-
-
dB
dB
%
BLF182XR_BLF182XRS
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 11



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NXP Semiconductors
BLF182XR; BLF182XRS
Power LDMOS transistor

&RVV
S)

DDD




      
9'6 9
Fig 1.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF182XR and BLF182XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 100 mA; PL = 250 W pulsed; f = 108 MHz.
7.2 Impedance information
JDWH
=L
JDWH
Fig 2. Definition of transistor impedance
GUDLQ
=/
GUDLQ
DDQ
Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 250 W.
f
(MHz)
Zi
()
ZL
()
108 <tbd>
<tbd>
BLF182XR_BLF182XRS
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 11



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