BLF178XR Datasheet PDF - NXP

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BLF178XR
NXP

Part Number BLF178XR
Description Power LDMOS transistor
Page 14 Pages


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BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
CW
pulsed RF
f
(MHz)
108
108
VDS
PL
(V) (W)
50 1200
50 1400
Gp
(dB)
23
28
D
(%)
80
72
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with of 20 %:
Output power = 1400 W
Power gain = 28 dB
Efficiency = 72 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 128 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications



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NXP Semiconductors
BLF178XR; BLF178XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF178XR (SOT539A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLF178XRS (SOT539B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
5
34
[1]
3
4
5
2
sym117
12
5
34
[1]
1
3
5
4
2
sym117
Table 3. Ordering information
Type number Package
Name Description
BLF178XR
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
BLF178XRS
-
earless flanged balanced LDMOST ceramic package;
4 leads
Version
SOT539A
SOT539B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 110 V
6 +11 V
65 +150 C
- 200 C
BLF178XR_BLF178XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
2 of 14



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NXP Semiconductors
BLF178XR; BLF178XRS
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
transient thermal impedance from junction
to case
Tj = 150 C
Tj = 150 C; tp = 100 s;
= 20 %
[1][2] 0.11
[3] 0.033
K/W
K/W
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.

=WK MF
.:









DDD









WS V

(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration
BLF178XR_BLF178XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
3 of 14



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NXP Semiconductors
BLF178XR; BLF178XRS
Power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 5.5 mA
VGS(th)
VGSq
IDSS
IDSX
IGSS
RDS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state
resistance
VDS = 10 V; ID = 550 mA
VDS = 50 V; ID = 20 mA
VGS = 0 V; VDS = 50 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VGS = VGS(th) + 3.75 V;
ID = 19.25 A
Min
110
1.25
0.8
-
-
-
-
Typ
-
1.7
1.3
-
77
-
0.07
Max
-
2.25
1.8
2.8
-
280
-
Unit
V
V
V
A
A
nA
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Crs
Ciss
Coss
feedback capacitance
input capacitance
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ Max Unit
- 5.5 - pF
- 414 - pF
- 184 - pF
Table 8. RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
Gp power gain
PL = 1400 W
27 28 -
dB
RLin
input return loss
PL = 1400 W
- 15 11 dB
D
drain efficiency
PL = 1400 W
68 72 -
%
BLF178XR_BLF178XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
4 of 14



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