BLF10M6LS160 Datasheet PDF - NXP

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BLF10M6LS160
NXP

Part Number BLF10M6LS160
Description Power LDMOS transistor
Page 12 Pages


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BLF10M6160; BLF10M6LS160
Power LDMOS transistor
Rev. 1 — 24 June 2014
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to
1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
920 to 960
32 32
22.5 27
ACPR
(dBc)
41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range



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NXP Semiconductors
BLF10M6160; BLF10M6LS160
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF10M6160 (SOT502A)
1 drain
2 gate
3 source
BLF10M6LS160 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
1
[1] 3
2
2
3
sym112
1
[1] 3
2
1
2
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLF10M6160
- flanged ceramic package; 2 mounting holes; 2 leads
BLF10M6LS160
-
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
[1] Continuous use at maximum temperature will affect reliability.
Min
-
0.5
65
[1] -
Max
65
+13
+150
225
Unit
V
V
C
C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-case) thermal resistance from Tcase = 80 C; PL = 32 W
junction to case
Type
BLF10M6160
BLF10M6LS160
Typ Unit
0.5 K/W
0.44 K/W
BLF10M6160_BLF10M6LS160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 12



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NXP Semiconductors
BLF10M6160; BLF10M6LS160
Power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS
VGS(th)
VGSq
IDSS
IDSX
IGSS
gfs
RDS(on)
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
VGS = 0 V; ID = 0.72 mA
VDS = 10 V; ID = 216 mA
VDS = 32 V; ID = 1300 mA
VGS = 0 V; VDS = 32 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 13 V; VDS = 0 V
VDS = 10 V; ID = 7.5 A
VGS = VGS(th) + 3.75 V;
ID = 6.3 A
Min Typ Max Unit
65 - - V
1.4 1.9 2.4 V
1.7 2.2 2.7 V
- - 5 A
30.6 39 - A
- - 450 nA
- 13.5 - S
- 0.1 -
Table 7. AC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Crs feedback capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz
Min Typ Max Unit
- 4.2 - pF
Table 8. RF characteristics
Test signal: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1-64 DPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz; RF performance at
VDS = 32 V; IDq = 1200 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test
circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp
RLin
D
ACPR
power gain
input return loss
drain efficiency
adjacent channel power ratio
PL(AV) = 32 W
PL(AV) = 32 W
PL(AV) = 32 W
PL(AV) = 32 W
21 22.5 -
dB
- 8 5.5 dB
25 27 -
%
- 41 38 dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF10M6160 and BLF10M6LS160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 32 V; IDq = 1200 mA; PL = 160 W (CW); f = 960 MHz.
BLF10M6160_BLF10M6LS160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 12



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NXP Semiconductors
BLF10M6160; BLF10M6LS160
Power LDMOS transistor
7.2 Test circuit information
input
50 Ω
VGG
C15
R1
C8 C2 C6
C12 C10
C14
C1
Fig 1. Test circuit for operation at 900 MHz
C3 C5 C7 C9 C11
R2
L1
VDD
C16
output
C13 C4 50 Ω
001aah480
R1
C15
C1
C14
C12 C10 C6
C8
C2
C7 C11
L1
C5 C9
R2
C3
+ C16
C4
C13
001aah481
Fig 2.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5
and thickness = 0.76 mm.
See Table 9 for list of components.
Component layout
BLF10M6160_BLF10M6LS160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 12



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