BD910 Datasheet PDF - SGS-THOMSON

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BD910
SGS-THOMSON

Part Number BD910
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Page 4 Pages


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BD907/909/911
BD908/910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
n BD908, BD909, BD910, BD911 AND BD912
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD707, BD709, and BD711 are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
power linear and switching applications.
The complementary PNP types are BD908,
BD910, and BD912 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
P ara me t er
VCBO Collect or-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emit ter-Base Volt age (IC = 0)
IE,IC Collect or Current
IB Base Current
Ptot T otal Dissipation at Tc 25 oC
Ts tg Storage T emperature
Tj Max. Operating Junction T emperature
For PNP types voltage and current values are negative.
October 1995
NPN
PNP
BD907
BD908
60
60
V alu e
BD909
BD910
80
80
5
15
5
90
-65 to 150
150
BD911
BD912
100
100
Unit
V
V
V
A
A
W
oC
oC
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BD907/BD908/BD909/BD910/BD911/BD912
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
1. 67
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
ICBO
Parameter
Collector Cut-off
Current (IE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut- off Current
(IC = 0)
VCEO(sus)Collector-Emitt er
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitt er
Saturation Voltage
VBE(sat)Base-Emitter
Saturation Voltage
VBEBase-Emitter Voltage
hFEDC Current Gain
T est Con ditio ns
for BD907/908
for BD909/910
for BD911/912
Tcase = 150 oC
for BD907/908
for BD909/910
for BD911/912
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
for BD907/908
for BD909/910
for BD911/912
VCB = 30 V
VCB = 40 V
VCB = 50 V
VEB = 5 V
IC = 100 mA
IC = 5 A
IC = 10 A
IC = 10 A
for BD907/908
for BD909/910
for BD911/912
IB = 0.5 A
IB = 2.5 A
IB = 2.5 A
IC = 5 A
IC = 0.5 A
IC = 5 A
IC = 10 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
VCE = 4 V
Min. Typ.
60
80
100
40
15
5
Max.
500
500
500
5
5
5
1
1
1
1
1
3
2 .5
1 .5
250
150
Unit
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
fT Transition frequency IC = 0.5 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
** Value for which IC = 3.3 A at VCE = 2V.
For PNP types voltage and current values are negative.
VCE = 4 V
3
MHz
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DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
BD907/BD908/BD909/BD910/BD911/BD912
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
inch
TYP.
0.050
0.645
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
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BD907/BD908/BD909/BD910/BD911/BD912
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
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