BC856ALT1 Datasheet PDF - ON Semiconductor

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BC856ALT1
ON Semiconductor

Part Number BC856ALT1
Description General Purpose Transistors
Page 8 Pages


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BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
VCEO
−65
−45
−30
V
Collector-Base Voltage
BC856
BC857
BC858, BC859
VCBO
−80
−50
−30
V
Emitter−Base Voltage
VEBO
−5.0
V
Collector Current − Continuous
IC −100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
−55 to
+150
°C
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1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
3
xxM
12
xx = Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 8
1
Publication Order Number:
BC856ALT1/D



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BC856ALT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856 Series
BC857A, BC857B Only
BC858, BC859 Series
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
125
220
420
−0.6
100
Typ Max Unit
−−V
−−
−−
−−V
−−
−−
−−V
−−
−−
−−V
−−
−−
− −15 nA
− −4.0 mA
90 −
150 −
270 −
180 250
290 475
520 800
− −0.3
− −0.65
−0.7 −
−0.9 −
− −0.75
− −0.82
V
V
V
− − MHz
− 4.5 pF
dB
− 10
− 4.0
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BC856ALT1 Series
BC857/BC858/BC859
2.0
1.5 VCE = −10 V
TA = 25°C
1.0
0.7
0.5
0.3
0.2
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
−1.0
−0.9 TA = 25°C
−0.8
VBE(sat) @ IC/IB = 10
−0.7
−0.6 VBE(on) @ VCE = −10 V
−0.5
−0.4
−0.3
−0.2
−0.1 VCE(sat) @ IC/IB = 10
0
−0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−50 −100
Figure 2. “Saturation” and “On” Voltages
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
−0.4
IC = −50 mA
IC = −20 mA
IC = −200 mA
IC = −100 mA
0
−0.02
−0.1 −1.0
IB, BASE CURRENT (mA)
−10 −20
Figure 3. Collector Saturation Region
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.2 −1.0
−10
IC, COLLECTOR CURRENT (mA)
−100
Figure 4. Base−Emitter Temperature Coefficient
10
Cib
7.0
TA = 25°C
5.0
3.0 Cob
2.0
1.0
−0.4 −0.6
−1.0 −2.0 −4.0 −6.0 −10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
−20 −30 −40
400
300
200
150 VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5
−1.0 −2.0 −3.0 −5.0
−10 −20 −30 −50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current−Gain − Bandwidth Product
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BC856ALT1 Series
VCE = −5.0 V
TA = 25°C
2.0
1.0
0.5
0.2
−0.1 −0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
BC856
−1.0
−0.8
−0.6
−0.4
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = −5.0 V
−0.2
VCE(sat) @ IC/IB = 10
0
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
−2.0
−1.6
IC =
−1.2 −10 mA
−20 mA
−50 mA −100 mA −200 mA
−0.8
−0.4
TJ = 25°C
0
−0.02 −0.05 −0.1
−0.2 −0.5 −1.0 −2.0
IB, BASE CURRENT (mA)
−5.0 −10 −20
Figure 9. Collector Saturation Region
−1.0
−1.4
−1.8 qVB for VBE
−2.2
−55°C to 125°C
−2.6
−3.0
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
40
TJ = 25°C
20 Cib
10
8.0
6.0 Cob
4.0
2.0
−0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
−50 −100
500 VCE = −5.0 V
200
100
50
20
−1.0 −10 −100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current−Gain − Bandwidth Product
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