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Part Number

BAR63-05

Manufacturer Infineon Technologies AG
Short Description Silicon PIN Diodes
Long Description BAR63... Silicon PIN Diodes  PIN diode for high speed switching of RF signals  Very low forward resistance (low inser
Page 9 Pages

Datasheet : BAR63-05



  • BAR63-02L Silicon PIN Diodes
  • BAR63-02V Silicon PIN Diodes
  • BAR63-02W Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
  • BAR63-02W Silicon PIN Diodes
  • BAR63-03 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • BAR63-03W Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • BAR63-03W Silicon PIN Diodes
  • BAR63-04 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • BAR63-04 Silicon PIN Diodes
  • BAR63-04W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • BAR63-04W Silicon PIN Diodes
  • BAR63-05 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • BAR63-05 Silicon PIN Diodes
  • BAR63-05W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • BAR63-05W Silicon PIN Diodes
  • BAR63-06 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • BAR63-06 Silicon PIN Diodes
  • BAR63-06W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • BAR63-06W Silicon PIN Diodes
  • BAR63-07L4 Silicon PIN Diodes
  • BAR63-W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
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