AUIRG4BC30S-SL Datasheet PDF - IRF

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AUIRG4BC30S-SL
IRF

Part Number AUIRG4BC30S-SL
Description INSULATED GATE BIPOLAR TRANSISTOR
Page 13 Pages


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AUTOMOTIVE GRADE
PD - 96340
AUIRG4BC30S-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
AUIRG4BC30S-SL
Standard Speed IGBT
C VCES = 600V
• Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Lead-Free, RoHS Compliant
• Automotive Qualified *
G
E
n-channel
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Benefits
• Typical Applications: PTC Heater,
Discharge Switch & Relay Replacements
D2Pak
AUIRG4BC30S-S
TO-262
AUIRG4BC30S-SL
GC
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounteadnd still air conditions.
Ambient temperature (T A) is 25 °C, unless otherwise specified
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energyƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
600
34
18
68
68
±20
10
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case )
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.50
–––
1.44
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
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12/03/10
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AUIRG4BC30S-S/SL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS
Emitter-to-Collector Breakdown Volta„ge 18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —
0.75
1.40
1.6
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 18A
VGE = 15V
VCE(ON)
Collector-to-EmitteSr aturation Voltage
VGE(th)
GateThresholdVoltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance…
ICES Zero Gate Voltage Collector Current
IGES Gate-to-EmitterLeakageCurrent
— 1.84 —
— 1.45 —
V
IC = 34A
See Fig. 2, 5
IC = 18A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 250µA
6.0 11 —
S VCE = 100V, IC = 18A
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max.
50 75
7.3 11
17 26
22 —
18 —
540 810
390 590
0.26 —
3.45 —
3.71 5.6
21 —
19 —
790 —
760 —
6.55 —
7.5 —
1100 —
72 —
13 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 18A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 18A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 18A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature (See fig. 13b).
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23, (See fig. 13a).
ƒ Repetitive rating; pulse width limited by maximum junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
2
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AUIRG4BC30S-S/SL
Qualification Information
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
D2 PAK MS
TO-262
L1 †††
(per IPC/JEDEC J-STD-020)
N/A
Class M4 (400V)
AEC-Q101-002
Class H1C (2000V)
AEC-Q101-001
Class C5 (1000V)
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRG4BC30S-S/SL
50
40
30
Square wave:
60% of rated
voltage
20
I
10
Ideal diodes
0
0.1
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 21W
Triangular wave:
I
Clamp voltage:
80% of rated
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = RI MS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
4
100
TJ = 150 oC
10
TJ = 25 oC
1
VCC = 50V
5µs PULSE WIDTH
0.1
5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
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