ATF-25570 Datasheet PDF - HP

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ATF-25570
HP

Part Number ATF-25570
Description 0.5-10 GHz General Purpose Gallium Arsenide FET
Page 4 Pages


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0.5 – 10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25570
Features
• High Output Power:
20.5 dBm Typical P1 dB at 4 GHz
• Low Noise Figure:
1.0 dB Typical at 4 GHz
• High Associated Gain:
14.0 dB Typical at 4 GHz
• Hermetic Gold-Ceramic
Microstrip Package
Description
The ATF-25570 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a hermetic, high reliabil-
ity package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
70 mil Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
GA Gain @ NFO: VDS = 3 V, IDS = 20 mA
P1 dB
G1 dB
gm
IDSS
VP
Power Output @ 1 dB Gain Compression:
VDS =5 V, IDS = 50 mA
1 dB Compressed Gain: VDS =5 V, IDS =50 mA
Transconductance: VDS =3 V, VGS = 0 V
Saturated Drain Current: VDS = 3 V, VGS = 0 V
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 4.0 GHz
Units
dB
dB
dBm
Min.
13.0
Typ.
1.0
1.2
1.4
14.0
11.0
8.5
20.5
Max.
1.3
f = 4.0 GHz dB
mmho
mA
V
50
50
-3.0
13.0
80
100 150
-2.0 -0.8



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2
ATF-25570 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+7
-4
-8
IDSS
450
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 300°C/W; TCH = 150°C
1 µm Spot Size[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 3.3 mW/°C for
TCASE > 40°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-25570 Typical Performance, TA = 25°C
25 25
20 MSG
MSG
20
15
10 |S21|2
5
MAG
15
10
5
|S21|2
MAG
0
0.5 1.0 2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
0
0.5 1.0
2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.



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3
Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25°C, VDS = 3 V, IDS = 20 mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12 S22
dB Mag. Ang. Mag. Ang.
0.5
.98 -24
14.0 5.02 160
-28.9 .036 71
.56 -24
1.0
.96 -41
13.4 4.70 145
-26.2 .049 62
.55 -33
2.0
.84 -76
12.3 4.14 115
-22.5 .075 44
.49 -51
3.0
.78 -100
10.8 3.48 94
-20.9 .090 33
.46 -60
4.0 .72 -123 9.6 3.01 73 -19.8 .102 20 .42 -76
5.0 .68 -142 8.5 2.67 54 -18.8 .114 9
.38 -88
6.0 .63 -162 7.8 2.45 36 -18.3 .121 0
.35 -101
7.0
.60 175
7.2 2.30 18
-17.5 .133 -7
.30 -118
8.0
.58 150
6.3 2.06 -1
-17.0 .141 -16
.26 -138
9.0
.59 128
5.6 1.90 -19
-16.7 .146 -28
.25 -167
10.0
.60 113
4.7 1.72 -36
-16.4 .151 -35
.26 172
11.0
.60 104
4.1 1.61 -48
-16.1 .157 -40
.28 155
12.0 .59 91
3.9 1.56 -68
-15.9 .160 -44
.30 146
Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25°C, VDS = 5 V, IDS = 50 mA
Freq.
S11
S21
S12 S22
GHz Mag. Ang.
dB Mag. Ang.
dB Mag. Ang. Mag. Ang.
0.5
.97 -27
16.2 6.49 156
-32.0 .025 63
.59 -21
1.0
.94 -45
15.5 5.95 141
-29.9 .032 57
.60 -28
2.0
.81 -82
13.5 4.72 111
-26.2 .049 45
.58 -39
3.0
.73 -105
11.7 3.86 91
-24.9 .057 41
.55 -50
4.0
.66 -128
10.3 3.29 70
-23.4 .068 37
.52 -62
5.0 .61 -148 9.2 2.88 52 -22.5 .075 32 .49 -72
6.0 .57 -170 8.5 2.65 34 -21.6 .083 30 .48 -84
7.0 .56 167 7.6 2.41 16 -20.2 .097 28 .45 -98
8.0 .57 145 6.8 2.19 -1 -19.2 .110 18 .42 -115
9.0 .59 127 6.0 2.00 -18 -18.5 .119 12 .40 -136
10.0 .60 115 5.2 1.82 -35 -17.8 .129 4
.40 -159
11.0 .60 108 4.7 1.72 -47 -17.5 .134 1
.42 -176
12.0 .57 93
4.5 1.67 -64
-16.9 .143 -10
.44 173
A model for this device is available in the DEVICE MODELS section.



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70 mil Package Dimensions
.040
1.02
SOURCE
4
.020
.508
GATE
DRAIN
13
SOURCE 2
.004 ± .002
.10 ± .05
.070
1.78
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
mm
in .xxx = ± 0.005
mm .xx = ± 0.13
.495 ± .030
12.57 ± .76
.035
.89
www.hp.com/go/rf
For technical assistance or the location of
your nearest Hewlett-Packard sales
office, distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1998 Hewlett-Packard Co.
Obsoletes 5965-8711E
Printed in U.S.A. 5966-4977E (5/98)



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