APTGT150SK60T3AG Datasheet PDF - Microsemi


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APTGT150SK60T3AG
Microsemi

Part Number APTGT150SK60T3AG
Description IGBT Power Module
Page 5 Pages

APTGT150SK60T3AG datasheet pdf
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APTGT150SK60T3AG
Buck chopper
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 150A @ Tc = 100°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
28 27 26 25
29
30
23 22
20 19 18
16
15
Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
31
32
234
78
14
13
10 11 12
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 100°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
225
150
300
±20
600
300A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT150SK60T3AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 150A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE , IC = 1.5 mA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Isc Short Circuit data
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
9200
580 pF
270
VGE= ±15V ; VCE=300V
IC=150A
1.6 µC
Inductive Switching (25°C)
115
VGE = ±15V
VBus = 300V
IC = 150A
RG = 3.3Ω
45
225 ns
55
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 150A
130
50
300
ns
RG = 3.3Ω
70
VGE = ±15V
VBus = 300V
IC = 150A
RG = 3.3Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE 15V ; VBus = 360V
tp 6µs ; Tj = 150°C
0.85
1.5
mJ
4.1
5.3
mJ
750 A
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR = 600V
IF = 150A
VGE = 0V
600 V
Tj = 25°C
Tj = 150°C
Tc = 100°C
150
400
µA
150 A
Tj = 25°C
Tj = 150°C
1.6 2
1.5
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 150A
VR = 300V
di/dt =2800A/µs
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
100
150
7.2
15.2
ns
µC
Er Reverse Recovery Energy
Tj = 25°C
Tj = 150°C
1.7
3.6
mJ
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APTGT150SK60T3AG
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To heatsink M4
Wt Package Weight
Min Typ Max Unit
0.25
0.42
°C/W
2500
V
-40 175
-40 125 °C
-40 100
2.5 4.7 N.m
110 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R25
R25/R25
B25/85
B/B
Resistance @ 25°C
T25 = 298.15 K
TC=100°C
50
5
3952
4
RT
=
R25
exp⎢⎡
B25
/
85
⎜⎜⎝⎛
1
T25
1
T
⎟⎟⎠⎞⎥⎦⎤
T: Thermistor temperature
RT: Thermistor value at T
Max
Unit
kΩ
%
K
%
SP3 Package outline (dimensions in mm)
1 12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGT150SK60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V)
300
TJ=25°C
250
TJ=125°C
200 TJ=150°C
150
100
50
0 TJ=25°C
0 0.5 1 1.5 2 2.5 3
VCE (V)
Output Characteristics
300
TJ = 150°C
VGE=19V
250
200 VGE=13V
150 VGE=15V
100
VGE=9V
50
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
Transfert Characteristics
300
250 TJ=25°C
200
150
100 TJ=125°C
50 TJ=150°C
TJ=25°C
0
5 6 7 8 9 10 11 12
VGE (V)
Energy losses vs Collector Current
10
VCE = 300V
8
VGE = 15V
RG = 3.3
TJ = 150°C
6
Eoff
Er
4
Eon
2
0
0 50 100 150 200 250 300
IC (A)
Switching Energy Losses vs Gate Resistance
12
VCE = 300V
Eon
10 VGE =15V
IC = 150A
Eoff
Eoff
8 TJ = 150°C
6
4
2
Eon
Er
0
0 5 10 15 20 25
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
350
300
250
200
150
100 VGE=15V
50
TJ=150°C
RG=3.3
0
0 100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
IGBT
0.25 0.9
0.2 0.7
0.15 0.5
0.1 0.3
0.05 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
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