APTGT150SK170G Datasheet PDF - Microsemi


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APTGT150SK170G
Microsemi

Part Number APTGT150SK170G
Description IGBT Power Module
Page 5 Pages

APTGT150SK170G datasheet pdf
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APTGT150SK170G
Buck chopper
Trench + Field Stop IGBT®
Power Module
VBUS
Q1
G1
E1 OUT
CR2
0/ VBUS
G1 VBUS
E1
0/VBUS
OUT
VCES = 1700V
IC = 150A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
250
150
300
±20
890
300A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT150SK170G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1700V
350 µA
VGE = 15V
IC = 150A
Tj = 25°C
Tj = 125°C
2.0 2.4
2.4
V
VGE = VCE , IC = 3mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
13.5
0.55 nF
0.44
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 150A
RG = 4.7
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 150A
RG = 4.7
VGE = 15V
VBus = 900V
IC = 150A
RG = 4.7
Tj = 125°C
Tj = 125°C
370
40
650
180
400
50
800
300
48
47
ns
ns
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1700V
Tj = 25°C
Tj = 125°C
1700
V
350
600
µA
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 150A
IF = 150A
VR = 900V
di/dt =1600A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
150
1.8 2.2
1.9
385
490
38
62
17.5
35
A
V
ns
µC
mJ
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APTGT150SK170G
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
Min Typ Max Unit
0.14
0.26
°C/W
3500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT150SK170G
Typical Performance Curve
Output Characteristics (VGE=15V)
300
250 TJ=25°C
200
TJ= 125°C
150
100
50
0
01234
VCE (V)
Output Characteristics
300
TJ = 125°C
250
VGE=20V
200
150
VGE=13V
VGE=15V
100
50 VGE=9V
0
0 1 23 4 5
VCE (V)
Transfert Characteristics
300
250 TJ=25°C
200
150 TJ=125°C
100
50 TJ=125°C
0
5 6 7 8 9 10 11 12 13
VGE (V)
Switching Energy Losses vs Gate Resistance
120
100
VCE = 900V
VGE =15V
80
IC = 150A
TJ = 125°C
Eon
60 Eoff
40
Er
20
0
0 5 10 15 20 25 30
Gate Resistance (ohms)
Energy losses vs Collector Current
120
100
VCE = 900V
VGE = 15V
Eon
RG = 4.7
80 TJ = 125°C
Eoff
60
Er
40
20
0
0 50 100 150 200 250 300
IC (A)
Reverse Bias Safe Operating Area
350
300
250
200
150
100
50
V GE=15V
TJ=125°C
RG= 4. 7
0
0 400
800 1200
VCE (V)
1600
2000
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14 0.9
IG BT
0.12
0.1 0.7
0.08 0.5
0.06 0.3
0.04
0.02 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
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