APTGT150DA120G Datasheet PDF - Microsemi


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APTGT150DA120G
Microsemi

Part Number APTGT150DA120G
Description IGBT Power Module
Page 5 Pages

APTGT150DA120G datasheet pdf
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APTGT150DA120G
Boost chopper
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
VBUS
CR1
OUT
Q2
G2
E2
0/VBUS
VBUS
E2
G2
0/VBUS
OUT
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
220
150
350
±20
690
300A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT150DA120G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
350 µA
VGE = 15V
IC = 150A
Tj = 25°C
Tj = 125°C
1.7 2.1
2.0
V
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
10.7
0.56 nF
0.48
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2
Tj = 125°C
Tj = 125°C
280
40
420
75
290
45
520
90
14
16
ns
ns
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
1200
V
250
600
µA
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 150A
IF = 150A
VR = 600V
di/dt =2500A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
150 A
1.6 2.1
1.6
V
170 ns
280
14 µC
28
6
11
mJ
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APTGT150DA120G
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
SP6 Package outline (dimensions in mm)
Min Typ Max Unit
0.18
0.30
°C/W
2500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT150DA120G
Typical Performance Curve
Output Characteristics (VGE=15V)
300
250
TJ=25°C
TJ=125°C
200
150
100
50
0
0123
VCE (V)
4
Output Characteristics
300
TJ = 125°C
250
VGE=17V
V GE=13V
200 VGE=15V
150 VGE=9V
100
50
0
01234
VCE (V)
Transfert Characteristics
300
250 TJ=25°C
200 TJ=125°C
150
100 TJ=125°C
50
0
5 6 7 8 9 10 11 12
VGE (V)
Switching Energy Losses vs Gate Resistance
34
30
VCE = 600V
VGE =15V
26 IC = 150A
22 TJ = 125°C
18
Eon
Eoff
14 Eon
10
Er
6
2
0 2 4 6 8 10 12 14 16 18
Gate Resistance (ohms)
Energy losses vs Collector Current
32
28
VCE = 600V
VGE = 15V
24 RG = 2.2
20 TJ = 125°C
Eoff
E on
16
12 Er
8
4
0
0 50 100 150 200 250 300
IC (A)
Reverse Bias Safe Operating Area
350
300
250
200
150 VGE=15V
100 TJ=125°C
RG= 2. 2
50
0
0
400
800
1200
1600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.9 IGBT
0.16
0.7
0.12
0.5
0.08 0.3
0.04 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
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APTGT150DA120G datasheet pdf
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