APT50GP60B Datasheet PDF - Advanced Power Technology


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APT50GP60B
Advanced Power Technology

Part Number APT50GP60B
Description POWER MOS 7 IGBT
Page 6 Pages

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APT50GP60B
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 200 kHz operation @ 400V, 26A
• 100 kHz operation @ 400V, 41A
• SSOA rated
TO-247
G
C
E
G
C
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT50GP60B
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
72
190
190A@600V
625
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA)
600
VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
3 4.5 6
VCE(ON)
I CES
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
2.2 2.7
2.1
500
2500
IGES Gate-Emitter Leakage Current (VGE = ±20V)
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA



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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
APT50GP60B
MIN TYP MAX UNIT
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 50A
SSOA Safe Operating Area
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 600V
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 50A
RG = 5
TJ = +25°C
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 50A
RG = 5
TJ = +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
190
MIN
5700
465
30
7.5
165
40
50
19
36
83
60
465
837
637
19
36
116
86
465
1261
1058
TYP
MAX
pF
V
nC
A
ns
µJ
ns
µJ
UNIT
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
.20
N/A
5.90
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.



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TYPICAL PERFORMANCE CURVES
70
VGE = 15V.
250µs PULSE TEST
60 <0.5 % DUTY CYCLE
50
40
30
TC=25°C
20
10 TC=125°C
TC=-55°C
0
0 0.5 1 1.5 2 2.5 3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V)
100
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
60 TJ = -55°C
40 TJ = 25°C
TJ = 125°C
20
0
0 1 2 3 4 5 6 7 8 9 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
TJ = 25°C.
250µs PULSE TEST
3 <0.5 % DUTY CYCLE
IC =100A
2.5
IC = 50A
2 IC = 25A
1.5
1
0.5
0
6 8 10 12 14 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
70
VGE = 10V.
250µs PULSE TEST
60 <0.5 % DUTY CYCLE
APT50GP60B
50
40
30
TC=25°C
20
10 TC=125°C
TC=-55°C
0
0 0.5 1 1.5 2 2.5 3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V)
16
IC = 50A
14 TJ = 25°C
VCE=120V
12
VCE=300V
10
8 VCE=480V
6
4
2
0
0 20 40 60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3
2.5 IC =100A
2
1.5
IC = 50A
IC = 25A
1
0.5 VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
200
180
160
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature



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TYPICAL PERFORMANCE CURVES
40
35
VGE= 10V
30
25 VGE= 15V
20
15
10 VCE = 400V
TJ = 25°C or 125°C
05 RG = 5
L = 100 µH
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
100
90 TJ = 25 or 125°C,VGE = 10V
80
70
60
50
40
30
TJ = 25 or 125°C,VGE = 15V
20
10 RG =5, L = 100µH, VCE = 400V
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
3500
VCE = 400V
L = 100 µH
RG = 5
TJ =125°C, VGE=15V
3000
2500
TJ =125°C,VGE=10V
2000
1500
1000
TJ = 25°C, VGE=15V
500
TJ = 25°C, VGE=10V
0
10 20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
6000
5000
VCE = 400V
VGE = +15V
TJ = 125°C
4000 Eon2 100A
3000
Eoff 100A
2000
Eon2 50A
1000 Eon2 25A
Eoff 50A
0 Eoff 25A
0 10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GP60B
140
120 VGE =15V,TJ=125°C
100 VGE =10V,TJ=125°C
80
60 VGE =15V,TJ=25°C
40
VGE =10V,TJ=25°C
VCE = 400V
20 RG = 5
L = 100 µH
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
TJ = 125°C, VGE = 10V or 15V
100
80
60
40 TJ = 25°C, VGE = 10V or 15V
20
RG =5, L = 100µH, VCE = 400V
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
VCE = 400V
L = 100 µH
RG = 5
TJ = 125°C, VGE = 10V or 15V
2500
2000
1500
1000
500
TJ = 25°C, VGE = 10V or 15V
0
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
3500
VCE = 400V
VGE = +15V
RG = 5
3000
2500
Eon2 100A
Eoff 100A
2000
1500
1000 Eon2 50A
Eoff 50A
500 Eon2 25A
0
Eoff 25A
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature




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