APT50GN60SDQ2G Datasheet PDF - Microsemi

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APT50GN60SDQ2G
Microsemi

Part Number APT50GN60SDQ2G
Description Resonant Mode Combi IGBT
Page 9 Pages


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TYPICAL PERFORMANCE CURVES
APT50GN60BDQ2 APTA5P0TG5N06G0BND6_0SSDDQ2Q(G2)
APT50GN60BDQ2(G) APT50GN60SDQ2(G)
www.DataSheet64U0.c0oVm
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
(B)
TO-247
G
C
E
D3PAK
(S)
C
GE
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT50GN60BD_SDQ2(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 8 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 175°C
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
107
64
150
150A @ 600V
366
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 800µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5.0 5.8 6.5
1.05 1.45 1.85
1.7
50
TBD
600
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com



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DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
SCSOA Short Circuit Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
APT50GN60BD_SDQ2(G)
Test Conditions
MIN
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 50A
TJ = 175°C, RG = 4.3Ω 7, VGE =
15V, L = 100µH,VCE = 600V
VCC = 360V, VGE = 15V,
TJ = 150°C, RG = 4.3Ω 7
Inductive Switching (25°C)
150
6
VCC = 400V
VGE = 15V
IC = 50A
RG = 4.3Ω 7
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 50A
RG = 4.3Ω 7
TJ = +125°C
TYP MAX UNIT
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3200
125 pF
100
9.0 V
325
25 nC
175
A
20
25
230
100
1185
1275
1565
20
25
260
140
1205
1850
2125
µs
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
RθJC
WT
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.41
°C/W
.67
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8 Continuous current limited by package lead temperature.
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.



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TYPICAL PERFORMANCE CURVES
160
VGE = 15V
140
120
TJ = 175°C
100
TJ = 125°C
80
TJ = 25°C
60
40
TJ = -55°C
20
0
012
34
5
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
160
140
250µs PULSE
TEST<0.5 % DUTY
CYCLE
TJ = -55°C
TJ = 25°C
120
TJ = 125°C
100
TJ = 175°C
80
60
40
20
00 2 4 6 8 10 12 14
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
TJ = 25°C.
250µs PULSE TEST
3.0 <0.5 % DUTY CYCLE
IC = 100A
2.5
2.0
IC = 50A
1.5
IC = 25A
1.0
0.5
0
8 10 12 14 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
200
15V
180
160
APT50GN60BD_SDQ2(G)
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13V
140 12V
120
100 11V
80 10V
60
9V
40
8V
20
7V
0
0 5 10 15 20 25 30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125°C)
16
IC = 50A
14 TJ = 25°C
12 VCE = 120V
VCE = 300V
10
8 VCE =480V
6
4
2
0
0
3.0
50 100 150 200 250 300 350 400
GATE CHARGE (nC)
FIGURE 4, Gate Charge
2.5
IC = 100A
2.0
IC = 50A
1.5
1.0
IC = 25A
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75
100 125 150 175
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
140
120
100
80 LeadTemperature
Limited
60
40
20
0
-50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature



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25
VGE = 15V
20
15
10
5 VCE = 400V
TJ = 25°C, 125°C
RG = 4.3Ω
L = 100 µH
0
10 30
50 70 90 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
120
RG = 4.3Ω, L = 100µH, VCE = 400V
100
80
60
40
20
TJ = 25 or 125°C,VGE = 15V
0
10 30 50 70 90 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
6000
5000
VCE = 400V
VGE = +15V
RG = 4.3Ω
4000
TJ = 125°C
3000
2000
1000
TJ = 25°C
0
10 30 50 70 90 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
16000
14000
VCE = 400V
VGE = +15V
TJ = 125°C
12000
Eon2,100A
10000
8000
Eoff,100A
6000
4000
Eon2,50A
Eoff,50A
2000
Eoff,25A
0 Eon2,25A
0 10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GN60BD_SDQ2(G)
350
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300
250
200 VGE =15V,TJ=125°C
150
VGE =15V,TJ=25°C
100
50 VCE = 400V
RG = 4.3Ω
L = 100 µH
0
10 30 50 70 90 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
RG = 4.3Ω, L = 100µH, VCE = 400V
140
120
TJ = 125°C, VGE = 15V
100
80
TJ = 25°C, VGE = 15V
60
40
20
0
10 30 50 70 90 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
4000
3500
3000
VCE = 400V
VGE = +15V
RG = 4.3Ω
TJ = 125°C
2500
2000
1500
1000
TJ = 25°C
500
0
10 30 50 70 90 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
5000
VCE = 400V
VGE = +15V
RG = 4.3Ω
Eon2,100A
4000
3000
Eoff,100A
2000
Eoff,50A
Eon2,50A
1000
Eoff,25A
Eon2,25A
0
0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature



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