APT20GN60SDQ1G Datasheet PDF - Microsemi Corporation

www.Datasheet-PDF.com

APT20GN60SDQ1G
Microsemi Corporation

Part Number APT20GN60SDQ1G
Description High Speed PT IGBT
Page 9 Pages


APT20GN60SDQ1G datasheet pdf
Download PDF
APT20GN60SDQ1G pdf
View PDF for Mobile

No Preview Available !

TYPICAL PERFORMANCE CURVES
APT20GN60BDQ1 APTA2P0GTN2600GBND_6S0DSQD1Q(G1)
APT20GN60BDQ1(G) APT20GN60SDQ1(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
(B)
TO-247
G
C
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
D3PAK
(S)
C
GE
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT20GN60BD_SDQ1(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 175°C
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
40
24
60
60A @ 600V
136
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA)
Gate Threshold Voltage (VCE = VGE, I C = 290µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5.0 5.8 6.5
1.1 1.5 1.9
1.7
50
TBD
300
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
www.DataSheet.in
Microsemi Website - http://www.microsemi.com



No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
SCSOA Short Circuit Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 20A
TJ = 175°C, RG = 4.3Ω 7, VGE =
15V, L = 100µH,VCE = 600V
VCC = 360V, VGE = 15V,
TJ = 150°C, RG = 4.3Ω 7
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 20A
RG = 4.3Ω 7
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 20A
RG = 4.3Ω 7
TJ = +125°C
APT20GN60BD_SDQ1(G)
MIN TYP MAX UNIT
1110
50 pF
35
9.5 V
120
10 nC
70
60 A
6
9
10
140
95
230
260
580
9
10
160
130
250
450
750
µs
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
1.1
1.35
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
www.DataSheet.in



No Preview Available !

TYPICAL PERFORMANCE CURVES
40
VGE = 15V
35
TJ = 25°C
30
25
TJ = 125°C
20
15
TJ = 175°C
10
TJ = -55°C
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
60
250µs PULSE
TEST<0.5 % DUTY
CYCLE
50
TJ = -55°C
40 TJ = 25°C
T = 125°C
J
30 TJ = 175°C
20
10
0
0 5 10 15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.0
TJ = 25°C.
250µs PULSE TEST
2.5
IC = 40A
<0.5 % DUTY CYCLE
2.0
IC = 20A
1.5
1.0 IC = 10A
0.5
0
6 8 10 12 14 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.40
1.30
1.20
1.10
1.00
0.90
0.80
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
www.DataSheet.in
90
15V
80
14V
APT20GN60BD_SDQ1(G)
70 13V
60
12V
50
40 11V
30
10V
20 9V
10 8V
0
0 5 10 15 20 25 30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125°C)
16
IC = 20A
14 TJ = 25°C
VCE = 120V
12
VCE = 300V
10
8 VCE = 480V
6
4
2
0
0
3.0
20 40 60 80 100 120 140
GATE CHARGE (nC)
FIGURE 4, Gate Charge
2.5
IC = 40A
2.0
1.5
IC = 20A
1.0
IC = 10A
0.5 VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150 175
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature



No Preview Available !

12
10 VGE = 15V
8
6
4
2
VCE = 400V
TJ = 25°C, TJ =125°C
RG = 4.3Ω
L = 100 µH
0
5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
25
RG = 4.3Ω, L = 100µH, VCE = 400V
20
15
10
TJ = 25 or 125°C,VGE = 15V
5
0
5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
VCE = 400V
VGE = +15V
RG = 4.3Ω
1000
800
TJ = 125°C
600
400
200
TJ = 25°C
0
5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
3500
3000
VCE = 400V
VGE = +15V
TJ = 125°C
2500
Eon2,40A
2000
1500
Eoff,40A
1000
500 Eon2,20A
Eoff,20A
Eoff,10A
0 Eon2,10A
0 10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
www.DataSheet.in
APT20GN60BD_SDQ1(G)
250
200
150
100
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
50
VCE = 400V
RG = 4.3Ω
L = 100 µH
0
5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
140
120
TJ = 125°C, VGE = 15V
100
80
TJ = 25°C, VGE = 15V
60
40
20
0 RG = 4.3Ω, L = 100µH, VCE = 400V
5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1400
1200
VCE = 400V
VGE = +15V
RG = 4.3Ω
1000
TJ = 125°C
800
600
TJ = 25°C
400
200
0
5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1400
1200
VCE = 400V
VGE = +15V
RG = 4.3Ω
1000
Eon2,40A
Eoff,40A
800
600 Eoff,20A
400 Eoff,10A
200 Eon2,20A
Eon2,10A
0
0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature



APT20GN60SDQ1G datasheet pdf
Download PDF
APT20GN60SDQ1G pdf
View PDF for Mobile


Related : Start with APT20GN60SDQ1 Part Numbers by
APT20GN60SDQ1 High Speed PT IGBT APT20GN60SDQ1
Microsemi Corporation
APT20GN60SDQ1 pdf
APT20GN60SDQ1G High Speed PT IGBT APT20GN60SDQ1G
Microsemi Corporation
APT20GN60SDQ1G pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact