APT20GN60BDQ1 Datasheet PDF - Advanced Power Technology

www.Datasheet-PDF.com

APT20GN60BDQ1
Advanced Power Technology

Part Number APT20GN60BDQ1
Description IGBT
Page 9 Pages


APT20GN60BDQ1 datasheet pdf
Download PDF
APT20GN60BDQ1 pdf
View PDF for Mobile

No Preview Available !

TYPICAL PERFORMANCE CURVES
®
APT2600G0NV60BDQ1(G)
APT20GN60BDQ1
APT20GN60BDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
TO-247
GC E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT20GN60BDQ1(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 175°C
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
40
24
60
60A @ 600V
136
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA)
Gate Threshold Voltage (VCE = VGE, I C = 290µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5.0 5.8 6.5
1.1 1.5 1.9
1.7
50
TBD
300
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Units
Volts
µA
nA
www.DataSheet.in



No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
SCSOA Short Circuit Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 20A
TJ = 175°C, RG = 4.37, VGE =
15V, L = 100µH,VCE = 600V
VCC = 360V, VGE = 15V,
TJ = 150°C, RG = 4.37
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 20A
RG = 4.37
TJ = +25°C
MIN
60
6
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 20A
RG = 4.37
TJ = +125°C
APT20GN60BDQ1(G)
TYP MAX UNIT
1110
50 pF
35
9.5 V
120
10 nC
70
A
µs
9
10
140
ns
95
230
260 µJ
580
9
10 ns
160
130
250
450 µJ
750
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
1.1
1.35
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only,
to the IGBT turn-on loss. Tested in inductive switching
without the effect
test circuit shown
of
in
a commutating diode reverse recovery current
figure 21, but with a Silicon Carbide diode.
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
www.DataSheet.in



No Preview Available !

TYPICAL PERFORMANCE CURVES
40
VGE = 15V
35
30 TJ = 25°C
25
20 TJ = 125°C
15
TJ = 175°C
10
5 TJ = -55°C
00 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
60 250µs PULSE
TEST<0.5 % DUTY
CYCLE
50 TJ = -55°C
40 TJ = 25°C
TJ = 125°C
30 TJ = 175°C
20
10
00 5 10 15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.0
TJ = 25°C.
250µs PULSE TEST
2.5
IC = 40A
<0.5 % DUTY CYCLE
2.0
IC = 20A
1.5
1.0 IC = 10A
0.5
06 8 10 12 14 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.40
1.30
1.20
1.10
1.00
0.90
0.80-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
www.DataSheet.in
90
15V
80
14V
APT20GN60BDQ1(G)
70 13V
60
12V
50
40 11V
30 10V
20 9V
10 8V
0 0 5 10 15 20 25 30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125°C)
16
14
TICJ
=
=
20A
25°C
VCE = 120V
12
VCE = 300V
10
8 VCE = 480V
6
4
2
00
3.0
20 40 60 80 100 120 140
GATE CHARGE (nC)
FIGURE 4, Gate Charge
2.5
IC = 40A
2.0
1.5
IC = 20A
1.0
IC = 10A
0.5 250µsVGPEU=LS15EVT. EST
<0.5 % DUTY CYCLE
0 0 25 50 75 100 125 150 175
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature



No Preview Available !

12
10 VGE = 15V
8
6
4
2 VTRJCGE===2454.3°0C0,VTJ =125°C
0
L
5
=
100
10
µH
15
20
25
30
35
40
45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
25 RG = 4.3, L = 100µH, VCE = 400V
20
15
10
TJ = 25 or 125°C,VGE = 15V
5
0 5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
RVVGCGEE===4.43+0105VV
1000
800
TJ = 125°C
600
400
200
TJ = 25°C
0 5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
3500
3000
TVVJGCE=E
= 400V
= +15V
125°C
2500
Eon2,40A
2000
1500
Eoff,40A
1000
500 Eon2,20A
Eoff,20A
Eoff,10A
00
Eon2,10A
10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
www.DataSheet.in
APT20GN60BDQ1(G)
250
200
150
100
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
50 VRCGE==44.300V
L = 100 µH
0 5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
140
120
TJ = 125°C, VGE = 15V
100
80 TJ = 25°C, VGE = 15V
60
40
20
0
RG
5
= 4.3, L =
10 15
100µH,
20
VCE
25
=
400V
30
35
40
45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1400
1200
VCE = 400V
VGE = +15V
RG = 4.3
1000
TJ = 125°C
800
600
400 TJ = 25°C
200
0 5 10 15 20 25 30 35 40 45
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1400
1200
RVVGCGEE===4.43+0105VV
1000
Eon2,40A
Eoff,40A
800
600 Eoff,20A
400 Eoff,10A
200 Eon2,20A
Eon2,10A
0 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature



APT20GN60BDQ1 datasheet pdf
Download PDF
APT20GN60BDQ1 pdf
View PDF for Mobile


Related : Start with APT20GN60BDQ Part Numbers by
APT20GN60BDQ1 IGBT APT20GN60BDQ1
Advanced Power Technology
APT20GN60BDQ1 pdf
APT20GN60BDQ1 High Speed PT IGBT APT20GN60BDQ1
Microsemi Corporation
APT20GN60BDQ1 pdf
APT20GN60BDQ1G IGBT APT20GN60BDQ1G
Advanced Power Technology
APT20GN60BDQ1G pdf
APT20GN60BDQ1G High Speed PT IGBT APT20GN60BDQ1G
Microsemi Corporation
APT20GN60BDQ1G pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact