APT15GN120BDQ1 Datasheet PDF - Microsemi

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APT15GN120BDQ1
Microsemi

Part Number APT15GN120BDQ1
Description High Speed PT IGBT
Page 9 Pages


APT15GN120BDQ1 datasheet pdf
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TYPICAL PERFORMANCE CURVES
APT15GN120BDQ1
APT15GN120BDQ1(G)
APAT1P5TG1N51G20NB1D2_0SSDDQQ1(G1 )
APT15GN120SDQ1(G)
w w w . D a t a1S h2e0e0tV4 U . c o m
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
(B)
TO-247
G
C
E
D3PAK
(S)
C
GE
C
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT15GN120BD_SDQ1(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
45
22
45
45A @ 1200V
195
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RGINT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
Gate Threshold Voltage (VCE = VGE, I C = 600µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1200
5.0 5.8 6.5
1.4 1.7 2.1
2.0
200
TBD
120
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com



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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 15A
TJ = 150°C, RG = 4.3Ω 7, VGE =
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 15A
RG = 4.3Ω 7
TJ = +25°C
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 15A
RG = 4.3Ω 7
TJ = +125°C
APT15GN120BD_SDQ1(G)
MIN
TYP MAX UNIT
www.DataSheet4U.com
1200
65 pF
50
9.0 V
90
5 nC
55
45
10
9
150
110
410
730
950
10
9
170
185
475
1310
1300
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.64
1.18
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.



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TYPICAL PERFORMANCE CURVES
60
VGE = 15V
50
40
TJ = 125°C
30
TJ = 25°C
20
TJ = -55°C
10
0
01 2 3 4 5 6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
80
250µs PULSE
TEST<0.5 % DUTY
70 CYCLE
60
TJ = -55°C
50
TJ = 25°C
40
TJ = 125°C
30
20
10
0
0 4 8 12 16 20
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
TJ = 25°C.
250µs PULSE TEST
3.0 <0.5 % DUTY CYCLE
IC = 30A
2.5
2.0
IC = 15A
1.5
1.0 IC = 7.5A
0.5
0
8 10 12 14 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT15GN120BD_SDQ1(G)
60
15V www.DataSheet4U.com
50
13V
40
12V
30 11V
20 10V
9V
10 8V
7V
0
0 2 4 6 8 10
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125°C)
16
IC = 15A
14 TJ = 25°C
VCE = 240V
12
VCE = 600V
10
8 VCE =960V
6
4
2
0
0
3.0
20 40 60 80
GATE CHARGE (nC)
FIGURE 4, Gate Charge
100
2.5
IC = 30A
2.0
IC = 15A
1.5
1.0
IC = 7.5A
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature



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12
10
VGE = 15V
8
6
4
2
VCE = 800V
TJ = 25°C, TJ =125°C
RG = 4.3Ω
L = 100 µH
0
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
16
RG = 4.3Ω, L = 100µH, VCE = 800V
14
12
10
8
TJ = 25 or 125°C,VGE = 15V
6
4
2
0
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3000
2500
VCE = 800V
VGE = +15V
RG = 4.3Ω
TJ = 125°C
2000
1500
1000
500
TJ = 25°C
0
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
5000
4500
4000
VCE = 800V
VGE = +15V
TJ = 125°C
3500
Eon2,30A
Eoff,30A
3000
2500
2000
Eon2,15A
1500
1000
Eoff,15A
Eon2,7.5A
500 Eoff,7.5A
0
0 10 20 30 40 50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT15GN120BD_SDQ1(G)
200
180 www.DataSheet4U.com
160
140
VGE =15V,TJ=125°C
120
VGE =15V,TJ=25°C
100
80
60
40
VCE = 800V
20 RG = 4.3Ω
L = 100 µH
0
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
RG = 4.3Ω, L = 100µH, VCE = 800V
250
200 TJ = 125°C, VGE = 15V
150
100 TJ = 25°C, VGE = 15V
50
0 5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
VCE = 800V
VGE = +15V
RG = 4.3Ω
2500
TJ = 125°C
2000
1500
1000
500
TJ = 25°C
0
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
3500
3000
VCE = 800V
VGE = +15V
RG = 4.3Ω
Eoff,30A
2500
2000
1500
Eon2,30A
Eoff,15A
1000
Eon2,15A
500
Eoff,7.5A
0 Eon2,7.5A
0 25 50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature



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