AP99T03GR-HF-3 Datasheet PDF - Advanced Power Electronics

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AP99T03GR-HF-3
Advanced Power Electronics

Part Number AP99T03GR-HF-3
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 7 Pages


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Advanced Power
Electronics Corp.
AP99T03GP/R/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Very Low On-resistance
Fast Switching Performance
RoHS-compliant, halogen-free
G
D
S
BV DSS
RDS(ON)
ID
30V
2.5m
200A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP99T03GS-HF-3 is in the TO-263 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
The AP99T03GP-HF-3 is in the TO-220 through-hole package which is
used where a small PCB footprint or an attached heatsink is required.
Also available in the TO-262 surface mount package (AP99T03GR-HF-3)
which is used when a small PCB footprint and long leads are required.
Absolute Maximum Ratings
D (tab)
G
D S TO-263 (S)
G
D
S
D (tab)
TO-220 (P)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current 3
Continuous Drain Current 3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
200
120
120
800
156
3.12
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Value
0.8
40
62
Units
°C/W
°C/W
°C/W
Ordering Information
AP99T03GS-HF-3TR
AP99T03GP-HF-3TB
AP99T03GR-HF-3TB
RoHS-compliant TO-263, shipped on tape and reel (800 pcs/reel)
RoHS-compliant TO-220, shipped in tubes (50pcs/tube, 1000pcs/box)
RoHS-compliant TO-262, shipped in tubes (50pcs/tube, 1000pcs/box)
©2013 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201312022-3 1/7



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Advanced Power
Electronics Corp.
AP99T03GP/R/S-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=40A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=24V, VGS=0V
VGS= ±20V, VDS=0V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
30 - - V
- - 2.5 m
- - 4 m
0.8 - 2.5 V
- 110 -
S
- - 25 uA
- - ±100 nA
- 80 128 nC
- 11.5 - nC
- 55 - nC
- 16 - ns
- 60 - ns
- 55 - ns
- 20 - ns
- 5000 8000 pF
- 1060 - pF
- 850 - pF
- 1.1 2.2
Min. Typ. Max. Units
- - 1.2 V
- 55 - ns
- 80 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test
3.Package limitation current is 120A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2013 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/7



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Electronics Corp.
Typical Electrical Characteristics
320
T C = 25 o C
10V
7.0V
6.0V
240 5.0V
V G = 4.0V
160
80
0
0246
V DS , Drain-to-Source Voltage (V)
8
Fig 1. Typical Output Characteristics
3.2
I D =30A
T C =25 o C
2.8
2.4
2
1.6
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
40
30
T j =150 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2013 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP99T03GP/R/S-HF-3
200
T C = 150 o C
10V
7.0V
6.0V
160
5.0V
V G = 4.0V
120
80
40
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =40A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.6
I D =1mA
1.2
0.8
0.4
0
-50 0 50 100 150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/7



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Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP99T03GP/R/S-HF-3
10
I D = 30 A
f=1.0MHz
8000
8 V DS = 15 V
V DS = 18 V
V DS = 24 V
6
4
6000
4000
C iss
2
0
0 40 80 120
Q G , Total Gate Charge (nC)
160
Fig 7. Gate Charge Characteristics
2000
0
1
C oss
C rss
5 9 13 17 21 25
V DS ,Drain-to-Source Voltage (V)
29
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
100
100us
10
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
1
0.1 1
10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
©2013 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/7



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