AP9974AGP-HF Datasheet PDF - Advanced Power Electronics

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AP9974AGP-HF
Advanced Power Electronics

Part Number AP9974AGP-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP9974AGP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-
industrial applications and suited for low voltage applications.
BVDSS
RDS(ON)
ID
G
D
S
60V
12mΩ
68A
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
+20
68
43
272
104
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.2
62
Units
/W
/W
1
201310074



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AP9974AGP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=4.5V, ID=30A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=30A
Drain-Source Leakage Current
VDS=60V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
Gate-Source Leakage
VGS=+20V, VDS=0V
Total Gate Charge
ID=30A
Gate-Source Charge
VDS=48V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
VDS=30V
Rise Time
ID=30A
Turn-off Delay Time
RG=3.3Ω
Fall Time
VGS=10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
60 - - V
- - 12 mΩ
- - 15 mΩ
1 - 3V
- 71 -
S
- - 10 uA
- - 250 uA
- - +100 nA
- 33 45 nC
- 5 - nC
- 21 - nC
- 10 - ns
- 43 - ns
- 47 - ns
- 80 - ns
- 2680 3300 pF
- 260 - pF
- 180 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 30 - ns
- 18 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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200
T C =25 o C
160
120
80
10V
7.0V
5.0V
4.5V
40
V G =3.0V
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
I D = 30 A
T C =25 o C
14
12
10
8
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =150 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP9974AGP-HF
100
T C = 150 o C
80
60
10V
7.0V
5.0V
4.5V
40
20 V G =3.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =45A
V G =10V
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP9974AGP-HF
6
I D = 30 A
V DS =48V
5
4
3
2
1
0
0 10 20 30 40 50
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
Operation in this
area limited by
100 RDS(ON)
100us
10 1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
100
V DS =5V
80
T j =25 o C
T j =150 o C
60
40
20
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
f=1.0MHz
4000
3000
C iss
2000
1000
C oss
0 C rss
1 21 41 61 81
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4



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Advanced Power Electronics
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