AP9973GI Datasheet PDF - Advanced Power Electronics

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AP9973GI
Advanced Power Electronics

Part Number AP9973GI
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP9973GI
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Fast Switching Performance
Single Drive Requirement
D
Full Isolation Package
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
BVDSS
RDS(ON)
ID
60V
80mΩ
14A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
±20
14
9
40
25
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
5.0
65
Units
V
V
A
A
A
W
Units
/W
/W
Data and specifications subject to change without notice
1
201210072



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AP9973GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=9A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=10V, ID=9A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS=±20V
ID=9A
VDS=48V
VGS=4.5V
VDS=30V
ID=9A
RG=3.3Ω,VGS=10V
RD=3.3Ω
VGS=0V
VDS=25V
f=1.0MHz
60 - - V
- - 80 mΩ
- - 100 mΩ
1 - 3V
- 8.6 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 8 13 nC
- 3 - nC
- 4 - nC
- 7 - ns
- 15 - ns
- 16 - ns
- 3 - ns
- 720 1150 pF
- 77 - pF
- 45 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=14A, VGS=0V
IS=9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 28 - ns
- 27 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2



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40
T C =25 o C
30
10V
7.0V
5.0V
4.5V
20
10
V G =3.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
90
ID=9A
T C =25 o C
80
70
60
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
16
12
T j =150 o C
8
T j =25 o C
4
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
30
T C =150 o C
20
AP9973GI
10V
7.0V
5.0V
4.5V
10 V G =3.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =9A
V G =10V
1.6
1.2
0.8
0.31
0.4
trr
Q-50 0 50 100 150
rr
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.8
1.6
1.4
1.2
1
0.8
-50 0 50 100 150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP9973GI
12
ID=9A
10
V DS =30V
8 V DS =38V
V DS =48V
6
4
2
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
1
T C =25 o C
Single Pulse
10ms
100ms
1s
DC
0.1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
10000
1000
C iss
100
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
T
Duty factor = t/T
0.01 Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.31Single Pulse
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
trr
Q1 10
rr
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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