AP95T11GI-HF Datasheet PDF - Advanced Power Electronics

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AP95T11GI-HF
Advanced Power Electronics

Part Number AP95T11GI-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP95T11GI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
BVDSS
RDS(ON)
ID
110V
6.6m
60A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
110
+20
60
42
240
60
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.5
65
Units
/W
/W
1
200911242



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AP95T11GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=80V, VGS=0V
VGS= +20V, VDS=0V
ID=30A
VDS=80V
VGS=10V
VDS=50V
ID=30A
RG=3.3,VGS=10V
RD=1.6
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
110 - - V
- - 6.6 m
2 - 5V
- 62 -
S
- - 25 uA
- - +100 nA
- 100 160 nC
- 27 - nC
- 48 - nC
- 27 - ns
- 96 - ns
- 41 - ns
- 59 - ns
- 4600 7360 pF
- 870 - pF
- 300 - pF
-2 -
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=30A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 85 - ns
- 270 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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250
T C = 25 o C
200
10V
9.0V
8.0V
150
7.0V
100
50 V GS =6.0V
0
0 4 8 12 16 20 24 28
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100 150 200
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
40
30
T j =175 o C
20
T j =25 o C
10
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP95T11GI-HF
120
T C = 175 o C
10V
9.0V
100 8.0V
7.0V
80
60 V GS =6.0V
40
20
0
0 2 4 6 8 10
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
I D =30A
2.6 V G =10V
2.2
1.8
1.4
1.0
0.6
0.2
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
200
1.2
0.8
0.4
0.0
-50 0 50 100 150 200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP95T11GI-HF
12
I D = 30 A
V DS =80V
10
8
6
4
2
0
0 20 40 60 80 100 120
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100 Operation in this
area limited by
RDS(ON)
10
100us
1ms
10ms
1
T c =25 o C
Single Pulse
100ms
1s
DC
0.1
0.01 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
6000
5000
C iss
4000
3000
2000
1000
0
1
C oxx
C rss
5 9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
29
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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Advanced Power Electronics
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