AP9561GM Datasheet PDF - Advanced Power Electronics

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AP9561GM
Advanced Power Electronics

Part Number AP9561GM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP9561GM
RoHS-compliat Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-40V
18mΩ
-9.4A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
-40
+20
-9.4
-7.5
-40
2.5
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
Unit
/W
Data and specifications subject to change without notice
1
200806201



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AP9561GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=-250uA
VGS=-10V, ID=-9A
VGS=-4.5V, ID=-6A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-9A
VDS=-32V, VGS=0V
VDS=-32V, VGS=0V
VGS=+20V
ID=-9A
VDS=-32V
VGS=-4.5V
VDS=-20V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=20Ω
VGS=0V
VDS=-25V
f=1.0MHz
-40 - - V
- - 18 m
- - 30 m
-1 - -3 V
-9-S
- - -1 uA
- - -25 uA
- - +100 nA
- 26 42 nC
- 4 - nC
- 17 - nC
- 10 - ns
- 8 - ns
- 64 - ns
- 54 - ns
- 1700 2720 pF
- 360 - pF
- 290 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-2A, VGS=0V
IS=-9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 32 - ns
- 26 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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40
T A = 25 o C
30
20
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
10
0
01234
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
30
ID=-6A
T A =25
26
22
18
14
10
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
4
T j =25 o C
2
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP9561GM
40
TA=150oC
-10V
-7.0V
-5.0V
30 -4.5V
V G = -3.0 V
20
10
0
0123456
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID=-9A
1.8 V G =-10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.6
150
2.2
1.8
1.4
1
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP9561GM
14
I D = -9A
12 V DS = -32V
10
8
6
4
2
0
0 10 20 30 40 50
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10 100us
1ms
1 10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10
-V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
f=1.0MHz
2400
2000
C1600 iss
1200
800
C400 oss
C rss
0
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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