AP75T10AGP-HF-3 Datasheet PDF - Advanced Power Electronics

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AP75T10AGP-HF-3
Advanced Power Electronics

Part Number AP75T10AGP-HF-3
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP75T10AGP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Speed
RoHS-compliant, halogen-free
G
D
S
BV DSS
RDS(ON)
ID
105V
15m
65A
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and
cost-effectiveness.
G
D
S
The TO-220 through-hole package is widely used in commercial and industrial
applications where a small pcb footprint or an attached heatsink are required.
Absolute Maximum Ratings
D (tab)
TO-220 (P)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
105
±20
65
41
260
138
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.9
62
Unit
°C/W
°C/W
Ordering Information
AP75T10AGP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube)
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200708171-3 1/5



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AP75T10AGP-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
VGS=0V, ID=1mA
VGS=10V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=100V, VGS=0V
VDS=80V ,VGS=0V
VGS= ±20V
ID=30A
VDS=80V
VGS=10V
VDS=50V
ID=30A
RG=10, VGS=10V
RD=1.6
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Min. Typ. Max. Units
105 - - V
- - 15 m
1 - 3V
- 29.3 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 63 101 nC
- 9 - nC
- 30 - nC
- 18 - ns
- 74 - ns
- 65 - ns
- 104 - ns
- 2800 4480 pF
- 550 - pF
- 250 - pF
- 1.2 1.8
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=30A, VGS=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us , duty cycle <2%.
Min. Typ. Max. Units
- - 1.3 V
- 72 - ns
- 180 - nC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Typical Electrical Characteristics
250
T C = 25 o C
200
10V
7.0 V
150
100
5.0V
50 4.5V
V G = 4 .0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
34
I D =16A
30 T C =25 o C
26
22
18
14
10
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
40
30
T j =150 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP75T10AGP-HF-3
120
T C = 150 o C
100
10V
7.0V
80
5.0V
60
4.5V
40
V G = 4 .0V
20
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =30A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50 100 150
T j j,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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Electronics Corp.
Typical Electrical Characteristics (cont.)
AP75T10AGP-HF-3
14
I D = 30 A
12
V DS = 50 V
10
V DS = 64 V
V DS = 80 V
8
6
4
2
10000
1000
f=1.0MHz
C iss
C oss
C rss
0
0 20 40 60 80
Q G , Total Gate Charge (nC)
G
Fig 7. Gate Charge Characteristics
100
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
100
100us
1ms
10
10ms
T c =25 o C
Single Pulse
100ms
1s
DC
1
0.1 1 10 100 1000
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
0.01
0.00001
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
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Advanced Power Electronics
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