AP75T10AGP Datasheet PDF - Advanced Power Electronics


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AP75T10AGP
Advanced Power Electronics

Part Number AP75T10AGP
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages

AP75T10AGP datasheet pdf
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Advanced Power
Electronics Corp.
AP75T10AGP
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial through hole applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
G
D
S
105V
15mΩ
65A
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
105
±20
65
41
260
138
1.11
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
0.9
62
Units
/W
/W
Data and specifications subject to change without notice
200817071-1/4



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AP75T10AGP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
IGSS Gate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
VGS=0V, ID=1mA
VGS=10V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=100V, VGS=0V
VDS=80V ,VGS=0V
VGS= ±20V
ID=30A
VDS=80V
VGS=10V
VDS=50V
ID=30A
RG=10Ω,VGS=10V
RD=1.6Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Test Conditions
IS=30A, VGS=0V
IS=30A, VGS=0V
dI/dt=100A/µs
105 - - V
- - 15 mΩ
1 - 3V
- 29.3 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 63 101 nC
- 9 - nC
- 30 - nC
- 18 - ns
- 74 - ns
- 65 - ns
- 104 -
ns
- 2800 4480 pF
- 550 - pF
- 250 - pF
- 1.2 1.8
Min. Typ. Max. Units
- - 1.3 V
- 72 - ns
- 180 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4



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250
T C = 25 o C
200
150
10V
7.0 V
100
5.0V
50 4.5V
V G = 4 .0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
34
I D =16A
30 T C =25 o C
26
22
18
14
10
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =150 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP75T10AGP
120
T C = 150 o C
100
10V
7.0V
80
5.0V
60
4.5V
40
V G = 4 .0V
20
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =30A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
150
1.2
1
0.8
0.6
0.4
-50
0
50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3/4



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AP75T10AGP
14
I D = 30 A
12
V DS = 50 V
10
V DS = 64 V
V DS = 80 V
8
6
4
2
0
0 20 40 60 80
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
100us
1ms
10
10ms
T c =25 o C
Single Pulse
100ms
1s
DC
1
0.1 1 10 100 1000
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4




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