AP60T10GS Datasheet PDF - Advanced Power Electronics

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AP60T10GS
Advanced Power Electronics

Part Number AP60T10GS
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP60T10GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T10GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
100V
18m
67A
G
D
S
TO-220(P)
GD S
Rating
100
+20
67
42
250
167
288
-55 to 150
-55 to 150
TO-263(S)
Units
V
V
A
A
A
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Value
0.75
40
62
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200911104



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AP60T10GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=28A
VDS=VGS, ID=250uA
VDS=25V, ID=28A
VDS=80V, VGS=0V
VGS= +20V, VDS=0V
ID=28A
VDS=80V
VGS=10V
VDS=50V
ID=28A
RG=2.5,VGS=10V
RD=1.8
VGS=0V
VDS=25V
f=1.0MHz
100 - - V
- - 18 m
2 - 5V
- 45 -
S
- - 25 uA
- - +100 nA
- 55 90 nC
- 15 - nC
- 24 - nC
- 16 - ns
- 68 - ns
- 29 - ns
- 42 - ns
- 2800 4500 pF
- 400 - pF
- 155 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=28A, VGS=0V
IS=28A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 80 - ns
- 270 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25, IAS=24A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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200
T C = 25 o C
160
120
10 V
9.0V
8.0V
80
7.0V
40
V G = 6 .0V
0
02468
V DS , Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
30
20
T j =150 o C
10
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP60T10GS/P
100
T C = 150 o C
80
60
10V
9.0V
8.0V
7.0V
40
V G = 6.0 V
20
0
0 2 4 6 8 10
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D = 28A
V G = 10V
2.0
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP60T10GS/P
12
I D = 28 A
10 V DS = 50 V
V DS = 60 V
8 V DS = 80 V
6
4
2
0
0 20 40 60
Q G , Total Gate Charge (nC)
80
Fig 7. Gate Charge Characteristics
1000
Operation in this
100 area limited by
RDS(ON)
100us
10 1ms
T c =25 o C
Single Pulse
10ms
100ms
DC
1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
4000
3000
C iss
2000
1000
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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