AP50T10GH-HF Datasheet PDF - Advanced Power Electronics

www.Datasheet-PDF.com

AP50T10GH-HF
Advanced Power Electronics

Part Number AP50T10GH-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


AP50T10GH-HF datasheet pdf
Download PDF
AP50T10GH-HF pdf
View PDF for Mobile

No Preview Available !

Advanced Power
Electronics Corp.
AP50T10GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D BVDSS
100V
RDS(ON)
30mΩ
ID 37A
S
Description
AP50T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance. The through-hole version (AP50T10GJ) is
available for low-profile applications.
G
D
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy4
Avalanche Current1
Repetitive Avalanche Energy1
Storage Temperature Range
Operating Junction Temperature Range
100
+20
37
23
120
89.2
2
60
20
8.9
-55 to 150
-55 to 150
V
V
A
A
A
W
W
mJ
A
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.4
62.5
110
Units
/W
/W
/W
1
201411284



No Preview Available !

AP50T10GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=24A
VGS=5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=24A
VDS=80V, VGS=0V
VGS= +20V, VDS=0V
ID=24A
VDS=80V
VGS=10V
VDS=50V
ID=24A
RG=1Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
f=1.0MHz
100 -
--
-V
30 mΩ
- - 70 mΩ
1 - 3V
- 30 -
S
- - 25 uA
- - +100 nA
- 42 67 nC
- 8 - nC
- 19 - nC
- 11 - ns
- 42 - ns
- 26 - ns
- 8.5 - ns
- 1840 2940 pF
- 190 - pF
- 130 - pF
- 1.7 - Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=24A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 40 - ns
- 80 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Starting Tj=25oC, VDD=50V, L=0.3mH, RG=25Ω, IAS=20A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



No Preview Available !

AP50T10GH/J-HF
100
T C = 25 o C
10V
7.0V
80 6.0V
60
5.0V
40
V G = 4.0V
20
0
0 4 8 12
V DS , Drain-to-Source Voltage (V)
16
Fig 1. Typical Output Characteristics
80
T C = 150 o C
60
40
20
10V
7.0V
6.0V
5.0V
V G = 4.0V
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
70
I D =16A
T C =25 o C
60
2.4
I D =24A
V G =10V
2.0
50 1.6
.
40 1.2
30 0.8
20
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I D =250uA
1.6
150
12
T j =150 o C
T j =25 o C
8
1.2
0.8
4 0.4
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50 0 50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



No Preview Available !

AP50T10GH/J-HF
12
I D = 24 A
10
V DS = 50 V
8 V DS = 60 V
V DS = 80 V
6
4
2
0
0 10 20 30 40 50
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
3000
C2000
iss
1000
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
Operation in this
area limited by
RDS(ON)
100us
10
1
T c =25 o C
Single Pulse
1ms
10ms
100ms
DC
0.1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
. 0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



AP50T10GH-HF datasheet pdf
Download PDF
AP50T10GH-HF pdf
View PDF for Mobile


Related : Start with AP50T10GH-H Part Numbers by
AP50T10GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP50T10GH-HF
Advanced Power Electronics
AP50T10GH-HF pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact