AP50GT60SW-HF Datasheet PDF - Advanced Power Electronics

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AP50GT60SW-HF
Advanced Power Electronics

Part Number AP50GT60SW-HF
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Page 3 Pages


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Advanced Power
Electronics Corp.
AP50GT60SW-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
High Speed Switching
Low Saturation Voltage
VCE(sat),Typ.=1.85V@IC=45A
Built-in Fast Recovery Diode
RoHS Compliant & Halogen-Free
G
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25oC
IC@TC=100oC
ICM
IF@TC=100oC
PD@TC=25oC
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
C VCES
IC
TO-3P
G
Rating
600
+30
90
45
180
20
250
-55 to 150
150
300
600V
45A
C
E
Units
V
V
A
A
A
A
W
oC
oC
oC
Notes:
1.Pulse width limited by max. junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
http://www.DataSheet4U.net/
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
IGES
ICES
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGE=+30V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=45A
VCE=VGE, IC=250uA
IC=45A
VCE=400V
VGE=15V
VCE=300V,
Ic=45A,
VGE=15V,
RG=5Ω,
Inductive Load
VGE=0V
VCE=30V
f=1.0MHz
Value
0.5
1.2
40
Units
oC/W
oC/W
oC/W
Min. Typ. Max. Units
- - +100 nA
- - 1 mA
- 1.85 2.4 V
2.5 - 7.5 V
- 118 188 nC
- 30 - nC
- 64 - nC
- 60 - ns
- 50 - ns
- 140 -
ns
- 180 360 ns
- 0.8 - mJ
- 1.4 - mJ
- 3200 5120 pF
- 240 -
pF
- 75 - pF
VF FRD Forward Voltage
trr FRD Reverse Recovery Time
Qrr FRD Reverse Recovery Charge
IF=20A
IF=20A
di/dt = 100 A/us
- 1.45 1.8 V
- 60 - ns
- 120 - nC
Data and specifications subject to change without notice
1
201107271
datasheet pdf - http://www.DataSheet4U.net/



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AP50GT60SW-HF
300
T C =25 o C
20V
18V
250
15V
200
12V
150
100
V GE =10V
50
0
0 10 20 30
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
100
V GE =15V
80
T C =25 o C
60
T C =150 o C
40
20
0
01234
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
5
16
I C =45A
V CC =400V
12
8
4
0
0 40 80 120 160
Q G , Gate Charge (nC)
Fig 5. Gate Charge Characterisitics
120
T C =150 o C
100
80
60
40
20V
18V
15V
12V
V GE =10V
20
0
0 4 8 12 16 20
V CE , Collector-Emitter Voltage (V)
Fig 2. Typical Output Characteristics
3
V GE = 15 V
3
2
2
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1
I C = 50 A
I C =33A
1
0 40 80 120 160
Junction Temperature ( o C)
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
5000
4000
C ies
3000
2000
--
1000
C oes
0 C res
1 5 9 13 17 21 25 29 33
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2
datasheet pdf - http://www.DataSheet4U.net/



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AP50GT60SW-HF
300
200
100
0
0 50 100 150 200
Junction Temperature ( o C )
Fig 7. Power Dissipation vs. Junction
Temperature
20
T C =25 o C
15
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal
Impedance, Junction-to-Case (IGBT)
20
T C = 150 o C
15
10
5
I C = 50 A
33 A
15 A
0
0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
20
20
16
T j =150 o C
T j =25 o C
12
8
4
0
0 0.4 0.8 1.2 1.6
V F , Forward Voltage (V)
Fig 11. Forward Characteristic of
Diode
2
10
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5
I C = 50 A
33 A
15 A
0
0 4 8 12 16 20
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
1000
100
10us
10 100us
1
1ms
0.1
T C =25 o C
Single Pulse
0.01
1 10
100
10ms
1000
V CE ,Collector - Emitter Voltage(V)
10000
Fig 12. SOA Characteristics
3
datasheet pdf - http://www.DataSheet4U.net/



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Advanced Power Electronics
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