AP4439GH-HF Datasheet PDF - Advanced Power Electronics

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AP4439GH-HF
Advanced Power Electronics

Part Number AP4439GH-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP4439GH-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
10mΩ
-58A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
PD@TC=25
PD@TA=25
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
+25
-58
-37
-200
50
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value
2.5
62.5
Units
/W
/W
1
201012171



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AP4439GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=-250uA
VGS=-10V, ID=-30A
VGS=-4.5V, ID=-20A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-30A
VDS=-24V, VGS=0V
VGS=+20V, VDS=0V
ID=-20A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-10A
RG=3.3Ω
VGS=-10V
VGS=0V
VDS=-25V
f=1.0MHz
-30 - - V
- - 10 m
- - 17 m
-1 - -3 V
- 55 -
S
- - -10 uA
- - +100 nA
- 46 73.6 nC
- 6.5 - nC
- 28.5 - nC
- 10 - ns
- 35 - ns
- 85 - ns
- 110 -
ns
- 3180 5080 pF
- 500 - pF
- 490 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-30A, VGS=0V
IS=-10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 60 - ns
- 60 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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200
T C = 25 o C
-10V
-7.0 V
-6.0 V
160
-5.0 V
120
V G = - 4.0 V
80
40
0
0 4 8 12 16
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
14
I D = -20 A
T C =25
12
10
8
6
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T j =150 o C
10
T j =25 o C
0
0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP4439GH-HF
120
T C = 150 o C
-10V
-7.0V
100 -6.0V
-5.0V
80 V G = - 4.0 V
60
40
20
0
0 2 4 6 8 10 12
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D = -30A
1.8 V G = -10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I D = -250uA
1.6
1.2
0.8
0.4
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP4439GH-HF
10
8
V DS =-24V
I D =-30A
6
4
2
0
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
4000
C iss
3000
2000
1000
C oss
C rss
0
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100 Operation in this area
limited by RDS(ON)
100us
10 1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
1
0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(oftf)f
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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AP4439GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP4439GH-HF
Advanced Power Electronics
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