AP3801GM-HF Datasheet PDF - Advanced Power Electronics

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AP3801GM-HF
Advanced Power Electronics

Part Number AP3801GM-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP3801GM-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
Description
G
S
S
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
70mΩ
-5A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating
-30
+20
-5
-4
-20
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
/W
1
200905052



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AP3801GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=-250uA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5A
VDS=-30V, VGS=0V
VGS=+20V, VDS=0V
ID=-5A
VDS=-15V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
-30 - - V
- - 70 m
- - 105 m
-1 - -3 V
- 10 -
S
- - -1 uA
- - +100 nA
- 6.5 10.5 nC
- 2 - nC
- 3 - nC
- 6.5 - ns
- 8 - ns
- 20.5 -
ns
- 6.5 - ns
- 510 820 pF
- 75 - pF
- 70 - pF
- 5 7.5 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-2A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 19 - ns
- 13 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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30
T A = 25 o C
- 10V
- 7.0V
- 6.0V
- 5.0V
20 V G = - 4.0V
10
0
012345
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
ID=-3A
T A =25
70
60
50
40
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T j =150 o C
T j =25 o C
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
30
T A = 150 o C
20
AP3801GM-HF
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
10
0
012345
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID=-5A
1.8 V G =-10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.4
1.2
1
0.8
0.6
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP3801GM-HF
10
I D = -5A
V DS = -15V
8
6
4
2
0
0 2 4 6 8 10 12
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1 1ms
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
1000
800
600
C iss
400
200
C oss
C rss
0
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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Advanced Power Electronics
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