AP2764I-A Datasheet PDF - Advanced Power Electronics

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AP2764I-A
Advanced Power Electronics

Part Number AP2764I-A
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP2764I-A
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
Description
G
D
S
AP2764 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching,ruggedized design and cost-effectiveness.
BVDSS
RDS(ON)
ID
680V
1.1Ω
9A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
680
+30
9
6
36
37
40
9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.4
65
Units
/W
/W
1
200810272



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AP2764I-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Static Drain-Source On-Resistance3 VGS=10V, ID=4A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=4A
Drain-Source Leakage Current
VDS=480V, VGS=0V
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
VGS=+30V
ID=7A
VDS=200V
VGS=10V
VDD=200V
ID=7A
RG=50Ω,VGS=10V
RD=57Ω
VGS=0V
VDS=30V
Reverse Transfer Capacitance
f=1.0MHz
680 -
-
- - 1.1
2-4
-9-
- - 25
- - 250
- - +100
- 51 84
- 11.5 -
- 11 -
- 38 -
- 34 -
- 338 -
- 53 -
- 3120 5000
- 135 -
- 15 -
V
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
IS=7A, VGS=0V
IS=7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 530 - ns
- 8.7 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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14
T C =25 o C
12
10
10V
6.0V
8
6
5.0V
4
2 V G =4.0V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
25
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1
0.3 0.5 0.7 0.9 1.1 1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP2764I-A
8
T C =150 o C
6
4
10V
5.0V
4.5V
2 V G =4.0V
0
0 5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =4A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.2
150
2.8
2.4
2
1.6
1.2
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP2764I-A
16
I D =7A
12
V DS =200V
8
4
0
0 20 40 60 80
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
1s
T c =25 o C
DC
Single Pulse
0.01
1
10 100 1000
V DS , Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
f=1.0MHz
10000
C iss
C oss
100
C rss
1
1 5 9 13 17 21 25 29 33 37
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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