AP2762I-A Datasheet PDF - Advanced Power Electronics

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AP2762I-A
Advanced Power Electronics

Part Number AP2762I-A
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristics
Simple Drive Requirement
G
AP2762I-A
Preliminary
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
650V
RDS(ON)
1.45Ω
ID 6A
S
Description
AP2762 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching, ruggedized design and cost-effectiveness.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
±30
6
24
33
18
6
-55 to 150
-55 to 150
Units
V
V
A
A
W
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.8
65
Unit
/W
/W
1
20071231pre



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AP2762I-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=4A
VDS=520V, VGS=0V
VGS=±30V
ID=6A
VDS=200V
VGS=10V
VDD=200V
ID=3A
RG=50Ω,VGS=10V
RD=67Ω
VGS=0V
VDS=30V
f=1.0MHz
650 - - V
- - 1.45 Ω
2 - 4V
- 3.5 -
S
- - 100 uA
- - ±100 nA
- 43 70 nC
- 7.5 - nC
- 15 - nC
- 25 - ns
- 23 - ns
- 325 - ns
- 50 - ns
- 1330 2130 pF
- 100 - pF
- 8 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
IS=6A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 495 - ns
- 7 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2



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12
T C =25 o C
10
8
10V
8.0V
7.0V
6.0V
6
4 V G = 5.0 V
2
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
8
6
T j = 150 o C
4
T j = 25 o C
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP2762I-A
6
T C =150 o C
5
4
3
10V
8.0V
7.0V
6.0V
V G = 5 .0 V
2
1
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =3A
V G =10V
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
150
1.2
1
0.8
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP2762I-A
12
10
8
I D =6A
V DS =200V
6
4
2
0
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1
0.1
T C =25 o C
Single Pulse
0.01
1
10 100
V DS , Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
DC
1000
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
10000
C1000 iss
C100 oss
10
C rss
1
1 5 9 13 17 21 25 29 33
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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