AP18N20GS Datasheet PDF - Advanced Power Electronics

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AP18N20GS
Advanced Power Electronics

Part Number AP18N20GS
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP18N20GS/P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
Description
G
D
S
BVDSS
RDS(ON)
ID
200V
170mΩ
18A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP18N20GS) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
TO-220(P)
G D S TO-263(S)
Rating
200
±20
18
9.5
60
89
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.4
62
Units
/W
/W
Data & specifications subject to change without notice
201122062-1/4



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AP18N20GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=8A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=200V, VGS=0V
VDS=160V, VGS=0V
VGS=±20V
ID=10A
VDS=160V
VGS=10V
VDD=100V
ID=11A
RG=9.1Ω,VGS=10V
RD=9.1Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
200 -
- 0.25
--
2-
- 9.5
--
--
--
- 19
-5
-6
-9
- 21
- 25
- 19
- 1065
- 185
-3
- 1.6
Max.
-
-
170
4
-
10
100
±100
30
-
-
-
-
-
-
1700
-
-
2.4
Units
V
V/
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 180 -
ns
- 1150 -
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4



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40
T C = 25 o C
30
20
16 V
12 V
10 V
8.0 V
V G = 6 .0V
10
0
0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
240
I D =5A
T C =25 o C
210
180
150
120
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
14
12
10
8
T j =150 o C
T j =25 o C
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
30
T C = 150 o C
20
10
AP18N20GS/P
16 V
12 V
10 V
8.0 V
V G = 6 .0V
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I D =8A
V G =10V
2.4
2.0
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
150
1.3
1.1
0.9
0.7
0.5
-50 0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3/4



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AP18N20GS/P
14
I D = 10 A
12
V DS = 100 V
10 V DS = 130 V
V DS = 160 V
8
6
4
2
0
0 4 8 12 16 20 24
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
1 10ms
T c =25 o C
Single Pulse
100ms
1s
DC
0.1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
15
V DS =5V
12
T j =25 o C
T j =150 o C
9
6
3
0
02468
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
f=1.0MHz
10000
C1000 iss
C oss
100
10
C rss
1
1 11 21 31 41 51 61
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4/4



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