AP18N20GH Datasheet PDF - Advanced Power Electronics

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AP18N20GH
Advanced Power Electronics

Part Number AP18N20GH
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP18N20GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristics
RoHS Compliant
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
200V
170mΩ
18A
G DS
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP18N20GJ) are available for low-profile applications.
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
200
± 20
18
9.5
60
89
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
1.4
110
Unit
/W
/W
Data & specifications subject to change without notice
201122062-1/4



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AP18N20GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=8A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=10V, ID=10A
VDS=200V, VGS=0V
VDS=160V, VGS=0V
VGS= ± 20V
ID=10A
VDS=160V
VGS=10V
VDD=100V
ID=11A
RG=9.1Ω,VGS=10V
RD=9.1Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
200 - - V
- 0.25 - V/
- - 170 mΩ
2 - 4V
- 9.5 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 19 30 nC
-5
- nC
-6
- nC
-9
- ns
- 21 - ns
- 25 - ns
- 19 - ns
- 1065 1700 pF
- 185 - pF
- 3 - pF
- 1.6 2.4
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 180 - ns
- 1150 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4



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40
T C =25 o C
30
20
16V
12V
10V
8.0V
V G = 6 .0V
10
0
0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
600
I D =5A
T C =25 o C
520
440
360
280
200
120
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
14
12
10
8
6
T j =150 o C
4
T j =25 o C
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
30
T C =150 o C
20
AP18N20GH/J
16V
12V
10V
8.0V
V G = 6 .0V
10
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I D =8A
2.4 V GS =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
150
1.3
1.1
0.9
0.7
0.5
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4



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AP18N20GH/J
15
I D =10A
12
9
V DS =100V
V DS =130V
V DS =160V
6
3
0
0 6 12 18 24 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
1
T c =25 o C
Single Pulse
10ms
100ms
1s
DC
0
1 10 100 1000
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
15
V DS =5V
12
T j =25 o C
T j =150 o C
9
6
3
0
02468
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
f=1.0MHz
10000
Ciss
1000
Coss
100
10
Crss
1
1 11 21 31 41 51 61
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4/4



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