AP13N50W Datasheet PDF - Advanced Power Electronics

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AP13N50W
Advanced Power Electronics

Part Number AP13N50W
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP13N50W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
G
D
S
500V
0.52Ω
14A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
+30
14
9
50
156
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.8
40
Units
/W
/W
1
201008112



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AP13N50W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=7A
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
ID=14A
VDS=200V
VGS=10V
VDD=200V
ID=7A
RG=50Ω
VGS=10V
VGS=0V
VDS=30V
f=1.0MHz
500 -
-
- - 0.52
2-4
- 11 -
- - 100
- - +100
- 42 77
- 13 -
- 14 -
- 45 -
- 50 -
- 230 -
- 55 -
- 2300 3170
- 180 -
-6-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=14A, VGS=0V
IS=14A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 430 - ns
- 7.6 - uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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30
T C =25 o C
20
10
10 V
7.0 V
5.0V
4.5V
V G = 4.0 V
0
0.0 4.0 8.0 12.0 16.0 20.0 24.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
8
T j =150 o C
T j =25 o C
6
4
2
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP13N50W
20
T C =150 o C
16
12
8
10V
7.0V
5.0V
4.5V
V G = 4.0V
4
0
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I D =7A
V G =10V
2.4
2.0
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
150
1.3
1.1
0.9
0.7
0.5
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP13N50W
12
I D =14A
V DS =200V
10
8
6
4
2
0
0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
1
T C =25 o C
Single Pulse
10ms
100ms
DC
0
1
10 100
V DS ,Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
f=1.0MHz
3200
2400
C iss
1600
800
C oss
C rss
0
1 5 9 13 17 21 25 29 33
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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